Experimental g(m)/I-D Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...
The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...
Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...
In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices ...
The aim of this work has been the investigation of homo-junction Tunnel Field Effect Transistors starting from a compact modelling perspective to its possible applications. Firstly a TCAD based simulation study is done to explain the main device characteri ...
Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating reg ...
In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is i ...
This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...
