Advances in the characterization of nanowire photovoltaic devices
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Perhaps the largest challenge for our global society is to find ways to replace the slowly but inevitably vanishing fossil fuel supplies by renewable resources and, at the same time, avoid negative effects from the current energy system on climate, environ ...
This paper reports on medium term tests of anode-supported five-cell short stacks, as well as on some separate anode development. Two stacks were operated under steady-state conditions: one with unprotected metal interconnects, H2 fuel and 0.35Acm−2 (40% f ...
This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified Double Gate Schottky MOSFETs with dopant segregation. We show that in our devices the series resistances is significantly reduced by lo ...
Dye-sensitized solar cells (DSC), introduced by O'Regan and Grätzel in 1991, are a low cost alternative to conventional silicon photovoltaic cells, the latter requiring extremely pure starting materials and sophisticated production procedures. DSC's, based ...
Basic limitations of single-junction and tandem p-n and p-i-n diodes are established from thermodynamical considerations on radiative recombination and semi-empirical considerations on the classical diode equations. These limits are compared to actual valu ...
A micrometer-sized electroacoustic DNA-biosensor was developed. The device included a thin semi-crystalline polyethylene terephthalate (PET) dielectric layer with two Ag microband electrodes on one side and a DNA thiol-labeled monolayer adsorbed on a gold ...
Metal-insulator-silicon capacitors have been fabricated using novel insulators of SiO2/HfO2-Al2O3-HfO2 (HAH)/Al2O3 and metallic HfN gate, exhibiting a program-erasable characteristic. The memory capacitor presents a large memory window of 2.4 V under +12 V ...
It has been experimentally observed that the incorporated fluorine will greatly improve the reliability of high-permittivity gate dielectric based transistors, but the role of fluorine passivation on leakage current change through gate is still a debated i ...
This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified Double Gate Schottky MOSFETs with dopant segregation. We show that in our devices the series resistances is significantly reduced by lo ...
This paper reports on medium term tests of anode-supported five-cell short stacks, as well as on some separate anode development. Two stacks were operated under steady-state conditions: one with unprotected metal interconnects, H-2 fuel and 0.35 A cm(-2) ( ...