Publication
Physics and applications of charged domain walls
Related publications (32)
Hydrogen-induced tunable remanent polarization in a perovskite nickelate
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an ...
Nature Portfolio2024Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi
HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...
AMER INST PHYSICS2021Actuation of piezoelectric structures with ferroelectric thin films having multiple elements
A method for driving piezoelectric elements of a micro-system. The piezoelectric elements comprising a ferroelectric thin film, and being configured to be part of any one or a combination of items of a list comprising: a cantilever, a bridge, a diaphragm, ...
2020Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Hiroshi Iwai
This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...
2020Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous
Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...
Nature Publishing Group2015Breaking of the macroscopic centric symmetry in Ba₁₋xSrxTiO₃ ceramics and single crystals
Beyond the possibility of finding a lead-free piezoceramics as replacement for PZT, the world-wide research has focused on other mechanisms of electro-mechanical coupling alternative to piezoelectricity, such as electrostriction and, more recently, flexoel ...
EPFL2014Macroscopic Theory of Charged Domain Walls in Ferroelectrics
This thesis consists of a theoretical analysis of charged domain walls in ferroelectrics based on Landau theory and the theory of semiconductors. First, the internal structure of a 180-degree charged domain wall is considered. It is shown that different re ...
EPFL2012Lead-free high-temperature dielectrics with wide operational range
The dielectric, electrical and structural properties of (1-x) (0.94Bi(1/2)Na(1/2)TiO(3)-0.06BaTiO(3))-xK(0.5)Na(0.5)NbO(3) (BNT-BT-xKNN) with x=0.09, 0.12, 0.15, and 0.18 were investigated as potential candidates for high-temperature capacitors with a work ...
American Institute of Physics2011Ferroelectric Field Effect Transistor for Memory and Switch Applications
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...
EPFL2011Surface-stimulated phenomena in the polarization response of ferroelectrics
The integration of ferroelectrics in electronic devices requires that they be used in the form of thin films, which implies that for such systems finite-size effects related to the presence of a ferroelectric-electrode interface become important. In this t ...
EPFL2008