Effective quality factor tuning mechanisms in micromechanical resonators

Quality factor (Q) is an important property of micro- and nano-electromechanical (MEM/NEM) resonators that underlie timing references, frequency sources, atomic force microscopes, gyroscopes, and mass sensors. Various methods have been utilized to tune the effective quality factor of MEM/NEM resonators, including external proportional feedback control, optical pumping, mechanical pumping, thermal-piezoresistive pumping, and parametric pumping. This work reviews these mechanisms and compares the effective Q tuning using a position-proportional and a velocity-proportional force expression. We further clarify the relationship between the mechanical Q, the effective Q, and the thermomechanical noise of a resonator. We finally show that parametric pumping and thermal-piezoresistive pumping enhance the effective Q of a micromechanical resonator by experimentally studying the thermomechanical noise spectrum of a device subjected to both techniques. (C) 2018 Author(s).

Piezoelectric thin films for bulk acoustic wave resonator applications

Roman Lanz

Bandpass filters for microwave frequencies realized with thin film bulk acoustic wave resonators (FBAR) are a promising alternative to current dielectric or surface acoustic wave filters for use in mobile telecommunication applications. With equivalent performance, FBAR filters are significantly smaller than dielectric filters and allow for a larger power operation than SAW filters. In addition, FBARs offer the possibility of on-chip integration, which will result in substantial volume and cost reduction. The first passive FBAR devices are now appearing on the market. They mainly cover needs in miniaturized RF-filters for the new bands around 2 GHz. A FBAR is essentially a thin piezoelectric plate sandwiched between two electrodes and acoustically isolated from the environment for energy trapping purposes. If the isolation is effectuated by an acoustic Bragg reflector, one speaks of solidly mounted resonators (SMR). Piezoelectric aluminum nitride (AlN) thin films are predominantly used in the emerging FBAR technology because AlN exhibits a sufficient electromechanical coupling coefficient kt2 , low acoustic losses at microwave frequencies, a low temperature coefficient of frequency, and its chemical composition is compatible with CMOS requirements. This thesis has two research directions. In the first part, FBAR structures based on AlN thin films were investigated for applications at X-band frequencies (7.2-8.5 GHz), i.e. operating at much higher frequencies than the ones used for present products. The goal was to identify property limitations related to such high frequencies, and to demonstrate to industry high performing SMR filters at 8 GHz. In the second part, a new material for FBAR devices was studied. The motivation is that AlN allows for a restricted filter bandwidth only, limited by its coupling factor of maximal 7%. Monocrystalline KNbO3 appears as an ideal alternative with its high coupling factor kt2 of 47%, and relatively large sound velocity of 8125m/s for longitudinal waves along the [101] direction. Piezoelectricity of KNbO3 films grown on electrodes has never been characterized. Single crystal results indicate that the optimal film texture would be (101). In this thesis, the growth of KNbO3 films on Pt electrodes was studied with the goal to achieve this texture uniformly, and to characterize piezoelectric properties. X-band FBAR's were first studied with numerical simulations based on a one-dimensional theory of the thickness-extensional bulk acoustic wave (BAW). Thickness, acoustic properties and electrical conductivity of the electrodes have a large impact on the resonator characteristics. There are conflicting requirements with respect to optimum acoustic and electrical properties of the electrode materials. An optimum thickness was calculated for 8GHz FBARs that use Pt bottom and Al top electrodes. The characteristics of ladder filters have been calculated based on the impedances of single resonators. The adjustable filter parameters, i.e. the areas of series and shunt resonators, frequency de-tuning between series and parallel resonators, and number of π-sections were screened for a process window offering maximum filter bandwidth with lowest ripple and low insertion loss for a given out-of-band rejection. An important result of the numerical simulations was that the bandwidth of ladder filters can be doubled by de-tuning the series and parallel resonators by more (1.3 times) than the difference of resonance and anti-resonance frequency. This also leads to a flatter passband while keeping the ripples below ±0.2dB. Solidly mounted resonators and filters were fabricated using an acoustic multilayer reflector consisting of AlN and SiO2 λ/4 layers. All films were sputter deposited in a high vacuum sputter cluster system with 4 process chambers. The films were patterned using standard photolithography and dry etching processes. The SMR exhibited a strong and spurious-free resonance at 8GHz with a high quality factor of 360 and electromechanical coupling coefficient of 6.0%. The temperature coefficient of frequency was -18ppm/K, and the voltage coefficient of frequency was -72ppm/V. Passband ladder filters with T- and π-topology consisting of 3 to 14 SMR were successfully demonstrated with a center frequency of 8GHz. These filters were optimized for maximum bandwidth and exhibited an insertion loss of 5.5dB, a rejection of 32dB, a 0.2dB bandwidth of 99MHz (1.3%), and a 3dB bandwidth of 224MHz (2.9%). There was good correspondence between measured and simulated filter and resonator characteristics. For perfect agreement, parasitic elements needed to be taken into account. These were a series resistance of 5Ω and a parallel conductance of 2mS in case of single resonators. The series resistance can be explained with resistive losses in the electrodes, whereas the parallel conduction was due to conduction along the surface. For π-filters, an additional series inductance of 100pH was needed to obtain a satisfactory fit. This inductance increased the out-of band rejection and insertion loss. Besides the group delay variation, all industrial specifications were met. KNbO3 was in-situ sputter deposited at 500 to 600°C using a rf magnetron source. A dedicated sputter chamber with load-lock and oxygen resistant substrate heater was built for this purpose. The high volatility of potassium oxide requires a potassium enrichment of the target. Targets with several excess concentrations (in the form of K2CO3) were studied. Stoichiometric KNbO3 films were obtained with targets containing 25 and 40% excess K. Zero and 10% excess yielded K deficient films, whereas 100% and 200% excess K led to highly unstable targets with K accumulation on the target surface, resulting in K rich second phases. The potassium-to-niobium ratio in the films depends strongly on sputter pressure and substrate temperature. Dense films, nucleated with cubic {100} texture, were obtained on platinized silicon substrates with a 10nm thick IrO2 seed layer at substrate temperatures of 520°C. At lower temperatures the films were amorphous, and at higher temperatures the films were composed of individual and facetted KNbO3 grains. The cubic high-temperature {100} texture results in a mixed (101)/(010) texture in the orthorhombic room temperature phase. The measured relative permitivity of 420 indicates that both orientations are equally present. Micro-Raman confirms the orthorhombic line splitting. Piezoelectrical and ferroelectrical activity were verified by means of a piezoelectric sensitive atomic force microscope. A very large piezoelectric activity was observed on some of the grains, and the polarization could be switched on most of the grains. However, the average d33,f = e33/c33, as measured by means of laser interferometry, showed a modest value of 24pm/V. The effective coupling factor is derived as kt2=2.8%, which is small relative to the theoretical value of 47%. The high dielectric constant and the absence of piezoelectric activity along the [010] direction are responsible for the reduction of the kt2 factor. Film roughness, complexity of deposition process and open poling issue make KNbO3 integration into BAW devices a difficult task.

EPFL2004

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

Nicolas Abelé

Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) and wireless sensor network are the opportunities and challenges for the semi-conductor industry. The trend towards size and weight reduction, low power consumption and increased functionalities induces major technological issues. Today, the wireless circuit size is limited by the use of lots of external or "off-chip" components. Among them, quartz crystal, used as the time reference in any wireless systems, is the bottleneck of the miniaturization. Microelectromechanical systems (MEMS) is an emerging technology which has the capability of replacing the quartz. Based on similar technology than the Integrated Circuit (IC), MEMS are referred as electrostatically, thermally or piezoelectrically actuated mechanical structures. In this thesis, a new MEMS device based on the hybridization of a mechanical vibrating structure and a solid-sate MOS transistor has been developed. The Resonant Suspended-Gate MOSFET (RSG-MOSFET) device combines both advantages of a high mechanical quality factor and the transistor intrinsic gain. The physical mechanisms behind the actuation and the behavior of this device were deeply investigated and a quasi-static model was developed and validated, based on measured characteristics. Furthermore, the dynamic model of the RSG-MOSFET was created, taking into account the non-linear mechanical vibrations of the gate and the EKV model, used for MOSFET modeling. Two fabrication processes were successfully developed to demonstrate the proof of concept of such a device and to optimize the performances respectively. Aluminum-silicon (Al-Si1%) and pure silicon-based RSG-MOSFETs were successfully fabricated. DC and AC characterizations on both devices enabled to understand, extract and evaluate the mechanical and MOSFET effects. A specifically developed RF characterization methodology was used to measure the linear and non-linear behaviors of the resonator and to evaluate the influence of each polarization voltages on the signal response. RSG-MOSFET with resonant frequencies ranging from 5MHz to 90MHz and quality factor up to 1200 were measured. Since MEMS resonator quality factor is strongly degraded by air damping, a 0-level thin film vacuum packaging (10-7 mBar) process was developed, compatible with both AlSi-based and silicon-based RSG-MOSFET. The technology has the unique advantage of being done on already released structure and the room temperature process makes it suitable for above-IC integration. In parallel, a front-end compatible process was defined and major build blocks were developed in industrial environment at STMicroelectronics. This technology is based on the Silicon-On-Nothing technology, originally developed for advanced transistor, and therefore making the MEMS resonator process compatible with CMOS co-integration. DC characterizations of SG-MOSFET had shown interesting performances of this device for current switch and memory applications. Mechanical contact of the gate with the MOSFET channel induces a current switching slope greater than 0.8mV/decade, much better than the theoretical MOSFET limit of 60mV/decade. Maximum switch isolations of -37dB at 2 GHz and -27dB at 10GHz were measured on these devices. A novel MEMS-memory has been demonstrated, based on the direct charge injection to the storage media by the mechanical contact of the metal gate. Charge injection and retention mechanisms were investigated based on measured devices. Cycling study of up to 105 cycles were performed without noticing major degradations of the electrical behavior neither mechanical fatigue of the suspended gate. The measured retention time places this memory in between the DRAM and the FLASH memories. A scaling study has shown integration and compatibilities capabilities with existing CMOS.

EPFL2007

AlN and AlScN contour mode resonators for MEMS-based RF front ends

Andrea Lozzi

Miniaturization is a simple yet very powerful concept. Applied to devices, it opens to plethora of new applications. Microelectromechanical systems (MEMS) are the result of scaling down the dimensions of devices to the micron range or the nano range (NEMS). This approach, leads to objects that not only are smaller, but often perform better than their bigger counterparts. It is not then a surprise that MEMS have been object of intense research in several different fields. In particular, the MEMS communications market is consolidating as we observe an increasing trend that points at hyper-connectivity of people and objects. RF MEMS-based front-end have been proposed in order to create communication systems that have low power consumption, easy integration with CMOS circuits and small form factor. Piezoelectric MEMS resonators are the core elements of the RF front-end. Among other technologies, contour mode resonators (CMRs) allow to chose the operating frequency via design. In this thesis, techniques to improve the performance of CMRs are studied. Two resonator parameters, the quality factor (Q) and the electromechanical coupling (kt^2), are markers to assess the resonator performance and to compare to state-of-the-art. As a matter of fact, a simultaneous enhancement of both has a great impact on the performance of the filters and oscillators built using them. Since Q is design-depended whereas kt^2 is mostly material dependent, a single approach often fails to enhance both. The thesis is based on two milestones. The first is to combine design optimization techniques with a materials with enhanced piezoelectric response compared to state of the art (i.e. aluminum nitride, AlN) to foster a simultaneous Q-kt^2 enhancement. The second is to test if a Q-kt^2 trade-off exists and how much designers can circumvent it combining selected techniques for each of these two parameters. The first part of the work focuses on Q. A modified fabrication technique is developed to: (i) take care of the Q instability with respect to the release area dimension and simultaneously (ii) create an acoustic reflector. This resulted in a 5X improvement in Q stability and up to 70 % Q recovery. The second part focuses on improving kt^2 using aluminum scandium nitride (AlScN), with 17 % Sc concentration. Our results show that anchor losses are still a dominant dissipation mechanism and that using AlScN we find an improvement in CMRs kt^2 higher than 2X. The highest FoM=70 (Q = 1658, kt^2 = 4.1 %) is obtained for a resonator operating at 390MHz, showing a motional resistance of 64 Ohm. The extracted relevant piezoelectric coefficient for AlScN CMRs, d31, is -3,89 pm/V (2.25X improvement compared to AlN). Finally, 2-port CMRs, are used to build oscillators. A new measurement technique is developed: the 2-port CMRs are directly contacted via RF probes, allowing the measurement of the phase noise (PN) for a large number of resonators. The best PN for the AlScN-based oscillator, measured at the highest Q =1413, is -100 dBc/Hz at 1 kHz offset frequency. Interestingly, when compared to an AlN-based oscillator with nearly identical Q, the AlScN PN performance is better than the AlN PN performance by 10 dBc/Hz at 1 kHz offset frequency. Since the only thing changing in the close loop setup is the resonator, this finding indicates that, regardless of the resonator Q, there may be a difference in the intrinsic resonator flicker noise due to the piezoelectric layer used.

EPFL2019