Iron-coated polymer films with high antibacterial activity under indoor and outdoor light, prepared by different facile pre-treatment and deposition methods
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B-doped diamond films were deposited by large-area hot filament chem. vapor deposition (HFCVD) on Si and different industrial electrode materials, such as Ti, Zr, Nb, Ta, W, and graphite, with areas up to 50 * 60 cm2. B-doping levels ranging from 50 to sev ...
The low energy part of proton induced SBD spectra have higher number of counts than expected from p+Si reactions. This is the case for all proton incident angles but the effect increases when approaching grazing angles. The effect is shown to be mainly due ...
Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates (similar to1 m(2)) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, a ...
Variable-temperature scanning tunneling microscopy was used to study the effect of kinetic cluster energy and rare-gas buffer layers on the deposition process of size-selected silver nanoclusters on a platinum(111) surface. Clusters with impact energies of ...
We study the deposition of Ag ions, and size selected Ag/sub 7/ and Ag/sub 19/ cluster ions on Pd(100) at total kinetic energies of 20 eV and 95 eV using thermal energy atom scattering and molecular dynamics simulations. We find that at all energies Ag ato ...
There is a need for chemically resistant coatings that protect the exposed surface of microfluidics components. Pinhole free films with low stress and a good uniformity on flat and inclined surfaces are required. In this study, amorphous silicon carbide (S ...
A combined PVD/PECVD process for the vacuum deposition of titaniumcontainingamorphoushydrogenatedcarbonfilms is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-t ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
