Refractive indexIn optics, the refractive index (or refraction index) of an optical medium is a dimensionless number that gives the indication of the light bending ability of that medium. The refractive index determines how much the path of light is bent, or refracted, when entering a material. This is described by Snell's law of refraction, n1 sin θ1 = n2 sin θ2, where θ1 and θ2 are the angle of incidence and angle of refraction, respectively, of a ray crossing the interface between two media with refractive indices n1 and n2.
Wide-bandgap semiconductorWide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.
Indium gallium arsenideIndium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Quantum wellA quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e.
Kerr effectThe Kerr effect, also called the quadratic electro-optic (QEO) effect, is a change in the refractive index of a material in response to an applied electric field. The Kerr effect is distinct from the Pockels effect in that the induced index change is directly proportional to the square of the electric field instead of varying linearly with it. All materials show a Kerr effect, but certain liquids display it more strongly than others. The Kerr effect was discovered in 1875 by Scottish physicist John Kerr.
Photonic-crystal fiberPhotonic-crystal fiber (PCF) is a class of optical fiber based on the properties of photonic crystals. It was first explored in 1996 at University of Bath, UK. Because of its ability to confine light in hollow cores or with confinement characteristics not possible in conventional optical fiber, PCF is now finding applications in fiber-optic communications, fiber lasers, nonlinear devices, high-power transmission, highly sensitive gas sensors, and other areas.
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Ultrashort pulseIn optics, an ultrashort pulse, also known as an ultrafast event, is an electromagnetic pulse whose time duration is of the order of a picosecond (10−12 second) or less. Such pulses have a broadband optical spectrum, and can be created by mode-locked oscillators. Amplification of ultrashort pulses almost always requires the technique of chirped pulse amplification, in order to avoid damage to the gain medium of the amplifier. They are characterized by a high peak intensity (or more correctly, irradiance) that usually leads to nonlinear interactions in various materials, including air.
Electronic componentAn electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. Electronic components have a number of electrical terminals or leads.
High harmonic generationHigh harmonic generation (HHG) is a non-linear process during which a target (gas, plasma, solid or liquid sample) is illuminated by an intense laser pulse. Under such conditions, the sample will emit the high harmonics of the generation beam (above the fifth harmonic). Due to the coherent nature of the process, high harmonics generation is a prerequisite of attosecond physics. Perturbative harmonic generation is a process whereby laser light of frequency ω and photon energy ħω can be used to generate new frequencies of light.
