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Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Related publications (34)

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A High-PDE, Backside-Illuminated SPAD in 65/40-nm 3D IC CMOS Pixel With Cascoded Passive Quenching and Active Recharge

Edoardo Charbon, Scott Anthony Lindner, Martin Wolf

We present a complete pixel based on a single-photon avalanche diode (SPAD) fabricated in a backside-illuminated (BSI) 3D IC technology. The chip stack comprises an image sensing tier produced in a 65-nm image sensor technology and a data processing tier i ...

2017

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi, Maxime Victor Thammasack, Tsung-Han Lin, David Baudouin

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...

Amer Chemical Soc2017

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

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A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic ...

EPFL2016

As we advance into the era of nanotechnology, semiconductor devices are scaled down to their physical limits, thereby opening up venues for new transistor channel materials based on nanowires and nanotubes. Transistors based on nanowires and nanotubes inhe ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Practical Applications of Tunnel Field Effect Transistors

Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over 50 years providing significant increases in transistor count per chip and operating frequency, thus enabled the built of ever more performant and complex s ...

EPFL2015

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices ...

Amer Chemical Soc2014

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Inkjet-printed organic transistors for the detection of gaseous analytes

Nico de Rooij, Danick Briand, Francisco Molina Lopez, Giorgio Mattana

This work presents the fabrication and characterization of inkjet-printed Organic Field Effect Transistors (OFETs) fabricated on flexible, plastic substrates for the detection of gaseous species. The transistors structure and fabrication process is present ...

2013