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Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-mu m Waveband

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Engineering Absorption for Foil Applications

Sebastian Mader

Light matter interactions such as extinction, reflection, and transmission can be described by classical optics. Dur-ing the past decades, research focused on a novel resonant extinction type called plasmonics that allows for en-hancement of both types of ...

EPFL2022

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Gergely Huszka, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

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Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

SPIE-INT SOC OPTICAL ENGINEERING2019

Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

Tobias Kippenberg, Victor Brasch, Michael Wolfgang Geiselmann, Junqiu Liu, Hairun Guo, Martin Hubert Peter Pfeiffer, Arne Kordts

Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method ...

Optical Society of America2016

A 1.5-W frequency-doubled semiconductor disk laser tunable over 40 nm at around 745 nm

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu

We report on a semiconductor disk laser emitting 1.5 W of output power at the wavelength of 745 nm via intracavity frequency doubling. The high power level and the >40 nm tuning range make the laser a promising tool for medical treatments that rely on phot ...

Spie-Int Soc Optical Engineering2016

Broadly tunable source around 2050 nm based on wideband parametric conversion and thulium–holmium amplification cascade

Camille Sophie Brès, Adrien Billat, Steevy Joyce Cordette

We report the design of a short-wave infrared continuous-wave light source featuring a 20 mW average output power, and with a wavelength that can be freely selected in the 2000-2100 nm range amid a low power ripple. The operating principle relies on the si ...

Optical Society of America2014

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Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Wat ...

Spie-Int Soc Optical Engineering2014

Analysis and Control of Optical Modes in VCSELs and VCSEL-Arrays

Elodie Lamothe

In this thesis, we studied the modal structure and the polarization of the optical field emitted by vertical-cavity surface-emitting lasers (VCSELs) emitting in the short- and long-wavelength domains (0.9-1.3μm). Our study concerns two types of components: ...

EPFL2013

Cavity-optomechanical cooling via radiation pressure dynamical backaction enables ground-state cooling of mechanical oscillators, provided the laser exhibits sufficiently low phase noise. In this paper, we investigate and measure the excess phase noise of ...

Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft2013

Spatial-Mode Discrimination in Guided and Antiguided Arrays of Long-Wavelength VCSELs

Elyahou Kapon, Nicolas Volet, Vladimir Iakovlev

Three means of optical confinement imposed on InAlGaAs/InP 1.3 mu m VCSEL arrays are investigated with self-consistent numerical model of laser operation. Laterally patterned tunnel junction (TJ), in-build guiding realized with air-gap patterning, and anti ...

Institute of Electrical and Electronics Engineers2013