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In this study, SiC ceramic substrates were prepared with 99.5% silicon carbide powders which were came from waste silicon mud during the manufacturing process of solar cells. It is found that a SiO2 layer with 50 nm in thickness is present on the SiC surface by TEM analysis. The relative density of the SiC samples is too low after sintering to 1550 degrees C, which is only 60% of the relative density. It will cause a poor mechanical strength at lower relative density of samples. To improve the density of SiC samples, an amorphous SiO2 was introduced as a sintering aid. Different amounts of amorphous SiO2 from 1 wt% to 5 wt% were then added into SIC powders and made into discs. We call this modified-SiC. These samples were sintered at high temperatures from 1350 degrees C to 1500 degrees C. The SiO2 addition and sintering temperature effects on the density, phase evolution, microstructure and mechanical properties of modified-SiC were investigated. A Y-ZrO2 layer was then coated onto the SiC disc. Sintering temperature can be efficiently decreased and the mismatch between ZrO2 coatings and SiC disc can be reduced when SiO2 is added into SiC. It is found that SiC powders with 3 wt% SiO2 addition shows the most optimum outcome with higher density and stronger mechanical properties.
Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset