First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology
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We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed. ...
Main stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2-3 times lower static power consumption in fully depleted C ...
A fully functional arrangement of a 2×1 array of active and self-detecting cantilevers, stress sensing metal-oxide-semiconductor transistors and thermal bimorph actuators was introduced. One of the two cantilevers was used as a reference while the other on ...
We present a lamellar grating interferometer realized with microelectromechanical system technology. It is used as a time-scanning Fourier-transform spectrometer. The motion is carried out by an electrostatic comb drive actuator fabricated by silicon micro ...
We present a fully integrated Mach-Zehnder interferometer in silicon-on- insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative ...