Publication

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Related publications (195)

Laterally vibrating-body double gate MOSFET with improved signal detection

Mihai Adrian Ionescu, Dimitrios Tsamados, Daniel Grogg, Marco Mazza, Hüseyin Cumhur Tekin, Nicoleta-Diana Ciressan

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1. ...

2008

Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si

Jin Won Seo

Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is require ...

Springer-Verlag New York, Ms Ingrid Cunningham, 175 Fifth Ave, New York, Ny 10010 Usa2008

Innovative optoelectronic approaches to biomolecular analysis with arrays of silicon devices

Carlotta Guiducci

This paper intends to provide a brief survey of the most advanced implementations of molecular analysis tools based on microtechnologies and to discuss a new approach for the development of integrated molecular analysis. The technique presented hereafter c ...

2008

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

Mihai Adrian Ionescu, Jyotshna Bhandari

We have investigated the p- and n-type dopants in thin SGOI (20 nm) material obtained by Ge enrichment. The samples are doped with either BF2 or arsenic or phosphorus and then annealed with either a spike or a 15 s rapid thermal annealing in a temperature ...

2008

Influence of abrasive concentration on the qualiy of wire-sawn silicon wafers

Christophe Ballif, Mathijs Pieter van der Meer, Adrien Bidiville

The sawing parameters have an impact on the depth of the defects in the wafers, and hence on their mechanical strength. However, as sawing is a highly complex system, the wafering industry is still relying on a “trial and error” approach to improve the saw ...

2008

Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

Christophe Ballif

The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...

2007

Solution-deposited carbon nanotube network TFTs on glass and flexible substrates

Albrecht Johannes Lindner

We have investigated two possible fields of application for carbon nanotube (CNT) networks in flexible displays. Transparent and conductive layers of CNTs were spray coated onto glass and plastic substrates. The spectral transmission of the produced layers ...

2007

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007

Novel cantilever design with high control of the mechanical performance

Luis Guillermo Villanueva Torrijo

A novel mechanical structure design with reduced deflection offset is reported. This design offers a batch processing solution to a well-known problem in the fabrication of very thin crystalline silicon structures, that is initial bending due to anchoring ...

2007

Nanostencil lithography for nanowire patterning

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

Stencil lithography is an innovative method for patterning that has a great flexibility from many points of view. It is based on shadow mask evaporation using thin silicon nitride membranes that allow the patterning of sub-100 nm features up to 100 μm in a ...

2006

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