Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)
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This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowi ...
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