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Resistive random access memory based multiplexers and field programmable gate arrays

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Goto Statement Considered Harmful – A Paper Review

In 1968 Edsger Dijkstra wrote a letter to the editor of Communications of the ACM (CACM) stating his opinion about using the goto statement in programs. This letter would serve to begin a hot-headed debate within the programming community. This topic, howe ...

2011

Memristive Devices Fabricated with Silicon Nanowire Schottky Barrier Transistors

Giovanni De Micheli, Sandro Carrara, Davide Sacchetto, Yusuf Leblebici, Mohamed Haykel Ben Jamaa

This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowi ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors

Francesco Stellacci, Kislon Voitchovsky

A mixed self-assembled monolayer containing aliphatic and electron-accepting (C-60) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply ...

2010

Weak Inversion for Ultra Low-Power and Very Low-Voltage Circuits

Eric Vittoz

This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called subthreshold mode. In analog circuits, w.i. is reached at very low current, but it is als ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Igor Stolichnov, Didier Bouvet, Giovanni Antonio Salvatore, Sebastian Riester, Roman Gysel

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Via-Programmable Structured ASIC Fabric Based on MCML Cells: Design-Flow and Implementation

Yusuf Leblebici, Stéphane Badel

This paper presents a regular layout fabric made of via-programmable MCML universal logic cells for structured ASIC applications and the associated design flow. The proposed structured ASIC fabric offers high speed operation, very high noise immunity, as w ...

2006

Semiconductor device

Serguei Okhonin

A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arran ...

2004

Field Programmable Gate Array (FPGA) Circuits

Eduardo Sanchez

Field programmable gate arrays (FPGA) are a recently developed family of programmable circuits. Like mask programmable gate arrays (MPGA), FPGAs implement thousands of logic gates. But, unlike MPGAs, a user can program an FPGA design as traditional program ...

Springer-Verlag1996

Design and analysis techniques for dynamic current mirrors

Today's world of electronics becomes more and more digital and therefore CMOS becomes the dominant technology. A CMOS process compared to a bipolar process offers several advantages, mainly a low power consumption which is important for portable systems po ...

EPFL1990