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Double-gate field-effect-transistor based biosensor

Related publications (35)

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High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators

Alexis Pierre Henri Marette

This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate. Fi ...

EPFL2018

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic ...

EPFL2016

Charge-transport properties of monolayer MoS2 at the interface with dielectric materials

Simone Bertolazzi

Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...

EPFL2015

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

Lorenzo Lugani

GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...

EPFL2015

Ambipolar silicon nanowire field effect transistor

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi

This invention describes a novel electronic device consisting of one-or more-vertically stacked gate-all-around silicon nanowire field effect transistor (SNWFET) with two independent gate electrodes. One of the two gate electrodes, acting on the central se ...

2013

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012