Publication

Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

Related publications (34)

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Configurable Logic Gates Using Polarity Controlled Silicon Nanowire Gate-All-Around FETs

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Michele De Marchi

This work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity ...

Institute of Electrical and Electronics Engineers2014

Contacts and Environmental Effects in Two-Dimensional MoS2 Field-Effect Transistors

Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...

EPFL2014

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

FinFET integrated low-power circuits for enhanced sensing applications

Mihai Adrian Ionescu, Antonios Bazigos, Alexandru Rusu, Sara Rigante, Paolo Livi

This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

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This invention describes a novel electronic device consisting of one-or more-vertically stacked gate-all-around silicon nanowire field effect transistor (SNWFET) with two independent gate electrodes. One of the two gate electrodes, acting on the central se ...

2013

Mobility engineering and a metal–insulator transition in monolayer MoS2

Andras Kis, Branimir Radisavljevic

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered mate ...

Nature Publishing Group2013

Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici

In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for polarity control. Several structures are fabricated, showing the effec ...

Institute of Electrical and Electronics Engineers2012

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Vivek Pachauri

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

EPFL2011

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011