Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
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For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...
Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 μm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ...
The motivation for this project is to prevent optical cross-talk in an optical sensor array, named ommatidia and fabricated in the CURVACE project. The goals of the project are to show that Micromoulding in Capillaries (or MIMIC) is a very effective and co ...
A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transi ...
The epitaxial growth of quantum rods (QRs) on GaAs was investigated. It was found that GaAs thickness in the GaAs/InAs superlattice used for QR formation plays a key role in improving the QR structural properties. Increasing the GaAs thickness results in b ...
Modern communication devices demand challenging specifications in terms of miniaturization, performance, power consumption and cost. Every new generation of radio frequency integrated circuits (RF-ICs) offer better functionality at reduced size, power cons ...
Radiation detectors based on the deposition of a 10 to 30 μm thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time i ...
A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
Recently, artificial intelligence (AI) systems gain an increasing popularity and their development is fast. One of the most important fields of the AI system development are artificial neural networks (ANN’s) which, due to continuous progress in microelect ...
