Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations

While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values. Write Termination (WT) circuits are a potential solution to solve these issues. However, previously reported WT circuits do not demonstrate sufficient reliability. In this work, we propose an industrially-ready WT circuit that was simulated with a RRAM model calibrated on real measurements. We perform extensive CMOS and RRAM variability simulations to extract the actual performances of the proposed WT circuit. Finally, we simulate the effects of the proposed WT circuit with memory traces extracted from real Edge-level data-intensive applications. Overall, we demonstrate 2x to 40x of energy gains at bit level. Moreover, we show from 1.9x to 16.2x energy gains with real applications running depending on the application memory access pattern thanks to the proposed WT circuit.

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David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios
2020
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https://infoscience.epfl.ch/record/277898?ln=en

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Dynamic random-access memory

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.

Memory

Memory is the faculty of the mind by which data or information is encoded, stored, and retrieved when needed. It is the retention of information over time for the purpose of influencing future action. If past events could not be remembered, it would be impossible for language, relationships, or personal identity to develop. Memory loss is usually described as forgetfulness or amnesia. Memory is often understood as an informational processing system with explicit and implicit functioning that is made up of a sensory processor, short-term (or working) memory, and long-term memory.

Non-volatile memory

Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).