Electrons leave the flatland: out-of-plane charge dynamics in layered materials

The goal of this thesis is to explore the "neglected" third dimension of layered materials, by studying the interlayer charge dynamics through dc conductivity, optical spectroscopy and ab-initio calculations. This project was designed to respond to the growing interest in layered materials and heterostructures. It is today evident that new properties originate by the interaction between neighbouring atomic planes, but the magnitude of the interlayer coupling has so far been poorly investigated. Reliable and reproducible experiments, in particular for dc conductivity, are today made possible thanks to the recent advancements in the field of materials microfabrication through focused ion beam. In the case of this thesis, it enabled me to review long-standing scientific paradigms and verify that previous experimental results differ by more than 2 orders of magnitude from the intrinsic material property. The subjects of study are metallic layered transition metal chalcogenides, as they offer a very flexible playground of crystalline structure and physical properties. The discussion will start in Chapter 3, where we will discuss the case of simple layered metals (2H-NbSe2, 2H-TaS2) or semimetal (ZrTe5), for which the anisotropic transport properties can be accurately predicted by their simple band structure calculation and Fermi surface topology. The anisotropic response will be treated in a more general term by considering the effective number of carriers which contributes to charge transport along a specific direction.

The discussion will continue by looking at the peculiar properties of 1T-TaS2, a prominent layered material for the rich set of charge density waves reconstruction, and the presence of a low temperature metal-insulator transition. Recent results from band structure calculations, photoemission spectroscopy and X-ray diffraction, on the contrary, suggests that strong interlayer interactions need to be accounted to justify the observed properties of this material. The experimental results in this thesis provide a clear evidence from transport properties in support of this new interpretation of a layered material where physical properties are strongly dictated by the way different layers interact with each other. This counterintuitive result is regarded as the consequence of the intertwined relation between the charge density wave and the orbital character of the conduction electrons bands, producing a c-axis oriented orbital texture.

The weak bond that holds together the crystalline planes in layered materials also creates the perfect condition for intercalation, or the growth of compounds with different crystalline layers stacked together, creating a natural heterostructure. We will explore the new physical properties that emerged in layered transition metal dichalcogenides when different layers are combined together to form a natural heterostructure, or when magnetic ions are intercalated. Surprising results are reported from the studies of interlayer conduction properties. The interaction between the different types of layers in the natural heterostructure of 4Hb-TaS2, influences the charge density wave and superconducting properties. In this situation, the conduction mechanism is highly anisotropic. In Chapter 6 we will see how conduction anisotropy is affected by the specific long-range magnetic order produced by the intercalated atoms.

Spectroscopic Studies on Iron-Chalcogenide Superconductors

Ping-Hui Lin

Superconductivity in F-doped LaFeAsO, Tc= 26 K was first reported by Kamihara et al in 2008. Following that, more iron-based superconductors, e.g., (Ba,K)Fe2As2, LiFeAs, and Fe1+yTe1-xSex were discovered. The new class of high Tc superconductors have attracted a tremendous interest. Iron-chacogenides do not involve arsenic but share several common features with the iron-pnictides. They are characterized by FeCh layers which are isostructural to the FeAs or FeP layers in the iron-pnictides. The electronic structure near the Fermi energy derives from the Fe 3d orbitals. Both families exhibit a spin density wave (SDW) ground state. Se substation for Te in FeTe suppresses the SDW and leads to superconductivity. From a more practical point of view, the iron-chacogenides have a rather simple structure, and they are less toxic and easier to obtain in large single crystals than the arsenide counterparts. For all these properties, the iron-chalcogenides are ideal compounds for angle-resolved photoemission (ARPES) studies. In this thesis, I have investigated by ARPES the normal state electronic structure of Fe1+yTe1-xSex superconductors with various doping level. I have studied the multi-orbital Fermi surface of Fe1+yTe1-xSex, mainly by means of polarized photons from synchrotron radiation sources. Individual bands of different orbital characters could then be distinguished by exploiting ARPES selection rules. I have also investigated the 3D electronic structure of these materials by performing normal emission measurements as a function of the incident photon energy. Namely, by using photon energies as large as 150 eV, I have performed an unusually broad ARPES survey of momentum space. The data reveal two inequivalent Fermi contours at nominally equivalent Gamma points in different Brillouin zones. The observed periodicity corresponds to a unit cell containing only one Fe atom, rather than the standard tetragonal unit cell containing two Fe atoms. I also observe a strong and selective suppression of spectral weight around perpendicular lines at the corner of the Brillouin zone.

EPFL2011

Pressure-tuned Transport Properties of Novel Iron-based Superconductors and Topological Insulators

Andrea Pisoni

The majority of interactions in solids strongly depend on the interatomic distances. The application of pressure changes the lattice parameters and modifies the electronic and the phononic energy spectra of a material avoiding some of the undesirable effects induced by chemical doping, like lattice disorder, impurity phases and phase separations. Layered materials are particularly affected by the application of pressure because their anisotropic structure eases the contraction of the lattice along specific crystallographic directions. In this thesis I study the effect of pressure on the transport properties of two new layered materials: L4Fe2As2Te(1-x)O4 (L = Pr, Sm, Gd) superconductors and beta-Bi4I4 topological insulator. The discovery of Fe-based superconductors (Fe-SCs) provided a new material base for studying the mechanism of high temperature superconductivity. These materials present unexpectedly high critical temperatures (Tc ) despite the presence of magnetic atoms. The parent compounds of Fe-SCs are semimetals with an antiferromagnetic ground state in which the itinerant electrons form a periodic modulation of spin density called spin density wave (SDW). By changing the structural properties or by adding/removing carriers the SDW order can be suppressed and superconductivity emerges. Our group recently succeeded in synthesizing a new family of Fe-SCs that presents Tc up to 45 K upon optimum chemical doping and substitution. I performed a systematic study of the upper critical field and the pressure-dependent electrical resistivity of single crystals of Pr4Fe2As2Te(1-x)O4 and Sm4Fe2As2Te(1-x)O(4-y)Fy . Hall coefficient and magnetoresistance of Pr4Fe2As2Te(1-x)O4 revealed electrons as the dominant type of charge carriers. The results can be successfully fitted by a two-band model that allows the estimation of the temperature dependent electron and hole densities and mobilities. In view of the exceptionally high structural anisotropy of this new class of Fe-SCs I investigated the electronic anisotropy of Sm4Fe2As2Te(1-x)O(4-y)Fy by means of microfabrication techniques. The results show a ratio between the out-of-plane and in-plane electrical resistivities that is the highest reported so far in Fe-SCs. Topological insulators (TIs) form another class of materials that is currently attracting a lot of attention both for fundamental physics and potential applications. In TIs metallic surface states coexist with an insulating bulk. Most of the TIs known so far are either three-dimensional strongly bonded bulk materials or layered van der Waals crystals. Beta-Bi4I4 is a material composed of quasi-one-dimensional molecular chains that was theoretically predicted, and only recently experimentally verified, to be a novel strong topological insulator. Due to its particular structure, beta-Bi4I4 offers the possibility to study the interplay between different ground states like topological insulating phase, charge-density-wave and superconductivity. Here I present, for the first time, a study of the thermoelectric properties of beta-Bi4I4 single crystals. Electrical resistivity, Seebeck coefficient, thermal conductivity and Hall coefficient measurements reveal a possible charge density-wave-order (CDW) at low temperature. According to resistivity and thermoelectric power measurements, pressure suppresses the CDW order. Resistivity measurements performed in a diamond anvil cell up to 20 GPa demonstrate that superconductivity is induced in beta-Bi4I4 for pressure above 10 GPa. Preliminary X-ray diffraction measurements by synchrotron radiation, performed on the sample recovered at ambient pressure after the experiment, reveal that a new Bi-I phase is formed at high pressure. The possibility that the topological insulator state could coexist with superconductivity in beta-Bi4I4 is certainly a fascinating option but it remains for now an open question.

EPFL2016

Properties of La2-xSrxCuO4 under epitaxial strain

Dominique Cloëtta

The subject of this thesis is the growth and analysis of high temperature superconductor (HTSC) films and the study of their electronic structure and properties. In particular, the effect of epitaxial strain is investigated, predominantly by means of in-situ angle resolved photoemission spectroscopy (ARPES), as well as X-ray diffraction, resistivity and susceptibility measurements. In order to achieve that goal we have developed a unique experimental set-up at the Synchrotron Radiation Center (University of Wisconsin), consisting in a dedicated pulsed laser deposition system, which enables us to grow thin films with excellent surface quality. Our sample transfer procedures assure that this surface quality is not affected on the way to the ARPES analyzer, which is connected to a beamline. We have built a similar film growth system at the EPFL with the aim to connect it to the SCIENTA analyzer at the IPN and to an analyzer on a beamline at the SLS in Villigen. For the first time we were able to perform ARPES measurements on in-situ grown films of HTSC. Previously to our work all the ARPES measurements were carried out on cleaved or scraped samples, predominantly single crystals of Bi2Sr2CaCu2O8 compounds. Thin films offer the possibility to study the effect of epitaxial strain induced through lattice mismatch between the film and its substrate. Compressive strain in the CuO2 plane has been known to enhance the critical temperature (TC) up to 50%, therefore we expected to see a signature of strain in the electronic dispersion. The Fermi surface of unstrained La2-xSrxCuO4 evolves with doping as reported for scraped single crystals, but also changes strongly with strain. Our studies show, that the in-plane compressive strain changes the Fermi surface topology from hole-like to electron-like. It enhances band dispersion and the Fermi level is crossed before the Brillouin zone boundary, in sharp contrast to the "usual" saddle point remaining ~30 meV below the Fermi level measured along the direction of the Cu-O bonds on unstrained samples. The associated reduction of the density of states near the Fermi level does not diminish the superconductivity; TC is enhanced in all our compressively strained samples. This result is rather surprising since such a reduction of the density of states, according to many mean field models, does not favor the increase of TC measured in our films. By comparing the ARPES measurements on our films with measurements on bulk crystals, we could also show that the results from our relaxed films are equivalent to those on bulk crystals, therefore excluding an explanation through finite size effects other than strain. Our latest results on films under huge tensile strain (1% change in c-axis) are significantly different: ARPES shows evidence for a 3-dimensional dispersion, in contrast with the strictly 2-dimensional dispersion observed on compressively strained films. Already the conduction band of relaxed La2-xSrxCuO4 is atypical: It has considerable apical-oxygen pz and Cu3dz2-r2 out-of-plane character, while for the rest of the cuprate HTSC, those orbitals hybridize far less with the conduction band. We relate the observed z-axis dispersion with the significant displacement of the apical-oxygen towards the CuO2 plane, induced by the epitaxial strain. Resistivity measurements show an insulating behavior of films under extreme tensile strain and no TC. Films with weaker tensile strain still exhibit superconductivity, but diminished as compared to the relaxed films. In summary, while the in-plane compressive strain tends to push the apical oxygen far away from the CuO2 plane, enhances the 2-dimensional character of the dispersion and increases TC, the tensile strain seems to act exactly in the opposite direction and the resulting dispersion is 3-dimensional. We have established the shape of the Fermi surface for both cases, yet further experiments are required to clarify fine details.

EPFL2005