Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures
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The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...
The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...
Hysteretic and nonlinear dielectric behaviour in ferroelectric ceramics has been of interest since 1950s, when these materials found application in various electronic devices. Presently, these phenomena concern with important areas of science, technology a ...
The phenomenon of polarization imprint consisting of the development of a preferential polarization state in ferroelectric films is known as one of the major issues impacting the development of high density ferroelectric memories. According to the commonly ...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d(33)-loop measurements in individual ...
The direct observation of blocked polarization domains at the electrode-ferroelectric interface of electrically fatigued ferroelectric films is reported. Blocked nanodomains are believed to be the origin of polarization fatigue in ferroelectric nonvolatile ...
A memory capacitor with a multistacked tunnel layer of Al2O3/HfO2/SiO2 (AHO) has been fabricated together with HfO2 charge trapping layer and Al2O3 control oxide layer. The resulting capacitor exhibits a memory window as large as 7.6 V for +/- 12 V sweep v ...
There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory cell and technique of reading data from and writing data into that memory cell. In this regard, in one embodiment of this aspect of ...
Ferroelectric thin films are widely studied nowadays as potential replacements for semiconductors in modern tunable microwave devices such as tunable filters, phase-shifters, frequency mixers, power dividers, etc. Recent progress in the deposition of compl ...
The present work analyzes the impact of ferroelectric materials like PZT when integrated in a standard 0.5µm CMOS process in order to realize nonvolatile memories. The project has been initiated conjointly by the Swiss Federal Institute of Technology of La ...