Quantification of hydrogen in nanostructured hydrogenated passivating contacts for silicon photovoltaics combining SIMS-APT-TEM: A multiscale correlative approach
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Formic acid, containing 4.4 wt% of hydrogen, is a non-toxic liquid at ambient temperature and therefore an ideal candidate as potential hydrogen storage material. Formic acid can be generated via catalytic hydrogenation of CO2 or bicarbonate in the presenc ...
In the context of the diminishing fossil energy resources and global warming, much research is focused on sustainable energy sources. The research that is presented in this thesis falls in this category as it contributes to the development of a device that ...
Due to the limiting amount of fossil fuel available and to the continuous growth of the world energy consumption, it becomes important to find alternative energy sources. Hydrogen produced by the photoelectrolysis of water is a perfect candidate as a clean ...
Amorphous and microcrystalline silicon have been proven to be very interesting for low cost thin film photovoltaic devices. Usually these two materials are deposited using the same large area plasma-enhanced chemical vapor deposition reactors from silane a ...
Increasing the efficiency of crystalline silicon (c-Si) solar cells requires the reduction of both bulk and interface recombination. Even if bulk recombination is almost suppressed, the symmetry of the crystal lattice is disturbed at the surface and hence, ...
This project aims to analyze, fabricate and characterize a mechanical hydrogen sensor. The potential of hydrogen gas detection using beam resonators is investigated. The beams consist mainly of Si3N4, providing a tensile stress to prevent buckling. Pd expa ...
Hydrogenation of C60 at 2 GPa and 723-823 K was performed with thermal decompn. of LiAlH4 as a hydrogen source. Anal. of hydrogenation products showed that the method can produce not only C60H36, but also hydrofullerides C60Hx with 44 < x < 52. Unlike othe ...
Plasma conditions for microcrystalline silicon deposition generally require a high flux of atomic hydrogen, relative to SiH alpha=0 -> 3 radicals, on the growing film. The necessary dominant partial pressure of hydrogen in the plasma is conventionally obta ...