Franz-Karl Reinhart, Jean-Daniel Ganière
After Zn diffusion into Si-doped GaAs (n almost-equal-to 1.5 X 10(18) cm-3), the Zn-diffused samples are annealed under different conditions: (i) in vacuum, (ii) in arsenic vapor, and (iii) with a Si3N4 mask capping the sample surface. The Zn concentration ...
1993