Ferroelectric Effects Probed by in situ Transmission Electron Microscopy

Reinis Ignatans
EPFL, 2022
EPFL thesis

Abstract

Ferroelectric perovskite oxides are widely used in sensors, actuators and optical modulators and, at the same time, they show promise for implementation in future applications such as energy storage, memory and cooling devices. At the infancy of the discovery of polycrystalline ferroelectrics, BaTiO3 was considered as a candidate for various applications, but the breakthrough for the commercialization of ferroelectrics came in 1952 when the ferroelectric PbZrO3 - PbTiO3 (PZT) solid solution system was discovered. PZT and other lead containing perovskite oxides remained on the forefront of scientific and industrial interest. However, concerns over the environmental and health hazards posed by these toxic materials in the electronic and electrical equipment created a legislation change. Nowadays, all applicable products in the EU must pass RoHS (Restriction of Hazardous Substances also known as Directive 2002/95/EC) compliance. This change in the industrial standards fueled research in lead-free ferroelectric materials once again. Attention is currently placed on materials based on BaTiO3, BaZrO3, (Na/K)NbO3, Na1/2Bi1/2TiO3. Their widespread application is yet to be realized as their physical properties pale in comparison to PZT. Substantial challenges also lie in the miniaturization of polar perovskites where effects at nano and microscopic scales become dominant, which inhibit their performance.In this thesis one of the most prominent lead-free ferroelectric perovskites BaTiO3 is studied by transmission electron microscopy (TEM) techniques in combination with in situ temperature and electric field control. In detail, a reliable focused ion beam sample preparation for in situ TEM electrical biasing for ferroelectrics is established. The method is tested on BaTiO3 at room temperature, where the electrical response is observed at the expected field values, further confirmed by finite element calculations. Domain area (polarization) - applied bias loops are directly measured revealing strong pinning at lower fields, while higher fields depin domain walls allowing for more free movement following Rayleigh's law.Upon increasing the temperature, BaTiO3 exhibits morphological transformations in its domain structure from ferroelectric 180° (close to room temperature) to ferroelastic 90° state (below the Curie temperature). Electrical biasing experiments of ferroelastic needle domains show two different forward growth mechanisms. In one case, the needle domains are shown to move freely, influenced mainly by Peierls-like potentials, while when perpendicular domains meet, their movement is hindered by strong domain domain pinning mediated by electromechanical fields. The latter one produces square shaped P-E like loops with distinct steps, indicative of Barkhausen pulses.Finally, the effect of ferroelectric phase transition on the electronic structure is studied with in situ electron energy loss spectroscopy (EELS) and density functional theory (DFT) calculations. Core-loss EELS measurements show that changes in the Ti 3d states qualitatively agree with DFT calculations. Off-axis low-loss EELS allows precise bandgap measurements in both phases. Custom experimental and data treatment methodologies are developed to retrieve momentum resolved dielectric functions, which show excellent fit with DFT calculated ones at small momentum transfer. A pathway to study oxygen deficient perovskites with EELS is theoretically demonstrated with DFT.

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Reinis Ignatans
EPFL, 2022
EPFL thesis

Abstract

Official source

https://infoscience.epfl.ch/record/293265?ln=en

About this result

Related concepts (36)

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Related publications (122)

Challenges and Applications to Operando and In Situ TEM Imaging and Spectroscopic Capabilities in a Cryogenic Temperature Range

Martial Duchamp, Reinis Ignatans, Vasiliki Tileli

In this Account, we describe the challenges and promising applications of transmission electron microscopy (TEM) imaging and spectroscopy at cryogenic temperatures. Our work focuses on two areas of application: the delay of electron-beam-induced degradation and following low-temperature phenomena in a continuous and variable temperature range. For the former, we present a study of LiMn1.5Ni0.5O4 lithium ion battery cathode material that undergoes electron beam-induced degradation when studied at room temperature by TEM. Cryogenic imaging reveals the true structure of LiMn1.5Ni0.5O4 nanoparticles in their discharged state. Improved stability under electron beam irradiation was confirmed by following the evolution of the O K-edge fine structure by electron energy-loss spectroscopy. Our results demonstrate that the effect of radiation damage on discharged LiMn1.5Ni0.5O4 was previously underestimated and that atomic-resolution imaging at cryogenic temperature has a potential to be generalized to most of the Li-based materials and beyond. For the latter, we present two studies in the imaging of low-temperature phenomena on the local scale, namely, the evolution of ferroelectric and ferromagnetic domains walls, in BaTiO3 and Y3Fe5O12 systems, respectively, in a continuous and variable temperature range. Continuous imaging of the phase transition in BaTiO3, a prototypical ferroelectric system, from the low-temperature orthorhombic phase continuously up to the centrosymmetric high-temperature phase is shown to be possible inside a TEM. Similarly, the propagation of domain walls in Y3Fe5O12, a magnetic insulator, is studied from similar to 120 to similar to 400 K and combined with the application of a magnetic field and electrical current pulses to mimic the operando conditions as in domain wall memory and logic devices for information technology. Such studies are promising for studying the pinning of the ferroelectric and magnetic domains versus temperature, spin-polarized current, and externally applied magnetic field to better manipulate the domain walls. The capability of combining operando TEM stimuli such as current, voltage, and/or magnetic field with in situ TEM imaging in a continuous cryogenic temperature range will allow the uncovering of fundamental phenomena on the nanometer scale These studies were made possible using a MEMS-based TEM holder that allowed an electron-transparent sample to be transferred and electrically contacted on a MEMS chip. The six-contact double-tilt holder allows the alignment of the specimen into its zone axis while simultaneously using four electrical contacts to regulate the temperature and two contacts to apply the electrical stimuli, i.e., operando TEM imaging. This Account leads to the demonstration of (i) the high-resolution imaging and spectroscopy of nanoparticles oriented in the desired [110] zone-axis direction at cryogenic temperatures to mitigate the electron beam degradation, (ii) imaging of low-temperature transitions with accurate and continuous control of the temperature that allowed single-frame observation of the presence of both the orthorhombic and tetragonal phases in the BaTiO3 system, and (iii) magnetic domain wall propagation as a function of temperature, magnetic field, and current pulses (100 ns with a 100 kHz repetition rate) in the Y3Fe5O12 system.

AMER CHEMICAL SOC2021

The macroscopic properties of ferroelectric materials depend directly on the domain configuration and the structure of the domain boundaries. For this reason, their study is of great scientific and technological interest. Several models have been developed to describe the properties of domain walls (structure, thickness, stress at the interface, mobility, …). However, few quantitative experimental observations of ferroelectric domain walls at an atomic scale have been reported, and even less results exist at higher temperatures. The ferroelectric domain-wall thickness is an important parameter whose behavior as a function of temperature is directly related to the order of the phase transition. In a second-order system, the temperature dependence of the domain-wall thickness follows a power law L ~ (Tc - T)-ω where ω is the critical exponent characterizing the divergence of L near the critical temperature Tc The predictions concerning the numerical value of are different depending on the theoretical model considered. Nevertheless, the majority of ferroelectric materials are known to undergo a first-order transition. In these systems the domain-wall thickness increases when the transition temperature is approached, but without diverging as for a second-order phase transition. The major objective of this work was to measure this broadening predicted by the theory for the first time at the approach of the phase transition temperature. We have shown that high resolution transmission electron microscopy is powerful technique for the study of ferroelectric domain walls not only at room temperature but also at higher temperatures. This method allows a direct and local observation of interfaces at an atomic scale which is a considerable advantage over diffraction techniques (X-ray, neutron, electron) and most of the other electron microscopy methods. However, the requirements of this method concerning the performance of the optical system of the microscope, the quality of the specimen and its stability in the column are very high, and today high resolution microscopy at high temperature remains a major challenge. The domain-wall thickness is obtained from the measurement of the crystal lattice distortion near the interface using two different numerical techniques of image analysis. The first method is based on the accurate determination of the center of bright peaks which appear on high resolution images for a judicious choice of the experimental parameters (delocalization and crystal thickness) and which represent the crystal lattice nodes. The second technique consists in selecting a circular region of the power spectrum around a reflection peak, centering the Fourier space on this reflection and performing the inverse Fourier transform. The information about the local displacement of atomic planes corresponding to the selected reflection is extracted form the phase component of the obtained complex image. Both techniques have been successfully applied to the measurement of the thickness of the 90° ferroelectric domain walls in PbTiO3 single crystals. This perovskite presents a first order phase transition at Tc = 492.2°C. which corresponds to the transformation of the crystal from the high-temperature paraelectric cubic phase to the low-temperature ferroelectric tetragonal phase. For the first time, the thermal broadening of domain walls has been measured quantitatively using HRTEM. The results are compared with the predictions made by phenomenological theories. We find that the domain wall thickness increases continuously from 0.7 nm at room temperature up to 5.5 nm near the transition temperature. Our results are consistent with those obtained by other authors at room temperature and those of a very recent study performed at higher temperatures using weak-beam microscopy. The measured domain-wall broadening is greater than the one predicted by a three-dimensional Ginzburg-Landau model where the polarization which is the primary order parameter is coupled to the elastic strain which plays the role of secondary order parameter. Our results are better described by a one-dimensional Ginzburg-Landau model without secondary order parameter. In this case the gradient coupling coefficient κ of the Ginzburg-Landau free energy is found to be 1.3 · 10-10 m3F-1. The methods developed for the measurement of the domain-wall thickness can by applied not only to other first-order ferroelectric crystals but also to ferroelectric systems presenting a second-order phase transition thus allowing the determination of the critical exponent ω. Characteristics only present in 2-D systems could also be detected by studying very thin specimens. Moreover, the same techniques can be adapted to the study of domain walls in purely ferroelastic materials.

EPFL2000

Characterization at the Atomistic Level of Defective Structures in Complex Materials

Piyush Agrawal

Defects are key to enhance or deploy particular materials properties. In this thesis I present analyses of the impact of defects on the electronic structure of materials using combined experimental and theoretical Electron energy loss spectroscopy (EELS) in (Scanning) Transmission Electron Microscopy. The energy loss near-edge structure (ELNES) in EELS reflects the element-specific electronic structure providing insights into bonding characteristics of individual atomic species. New electron optical devices have boosted the analytical capabilities by which materials can be investigated with atomic resolution and single atom sensitivity using (scanning) transmission electron spectroscopy (STEM/TEM).With the help of aberration correctors for forming small electron probes, high intensity electron beams can nowadays be focused to clearly less than 100 pm which has enhanced the resolution and sensitivity in analytical scanning transmission electron microscopy (STEM). Various kinds of defects in different complex oxides were studied: point defects like oxygen vacancies in BiVO4 and SrMnO3, edge-dislocations in BiFeO3, and planar defects in GaAs. By comparison with experimental data, structures for these systems were proposed based on all-electron density functional theory (DFT) code Wien2k. By comparing theoretical calculations and experimental data, a pronounced surface reduction in the oxidation state of vanadium in BiVO4 from +5 to +4 was unveiled, which is due to a high density of oxygen vacancies, and its importance in potential application of BiVO4 in photoelectrochemical energy conversion. A similar study was performed on a series of SrMnO3 thin films with different epitaxial strain where theoretical investigations revealed the impact of oxygen non-stoichiometry and strain on the O-K ELNES. In the next study, molecular dynamics simulations were combined with FEFF-based EELS calculations and its comparison with experiments was helpful for the correct prediction of the edge dislocation core structure in BiFeO3. This study also confirmed the presence of Fe atoms in the core of the edge dislocation which possibly makes these defects ferromagnetic whereas the bulk structure is known to be antiferromagnetic. This thesis has established methodologies for utilizing different codes, illustrating how links between experimental and theoretical ELNES can be used in revealing structural information around defects and how defects affect materials properties. This tandem methodology of theory and experiments is applicable to various future materials where the reliable interpretation of EELS data is pivotal in unfolding mysteries of such technologically important materials.

EPFL2017