Novel materials and algorithms for quantum technologies

The enormous advancements in the ability to detect and manipulate single quantum states have lead to the emerging field of quantum technologies. Among these, quantum computation is the most far-reaching and challenging, aiming to solve problems that the classic computers could never address because of the exponential scaling, while quantum sensing exploits the ability to address single quantum states to realize ultra-sensitive and precise detectors. Defect centers in semiconductors play a primary role in these fields. The possibility to store information in the spin of their ground state, manipulate it through microwaves, and read it optically allows to use them as qubits. In addition, the very sharp dependence of their properties on temperature, strain and magnetic fields makes them very promising quantum sensors. In this Thesis we aim at contributing to the progress of quantum technologies both at the hardware and software level. From a hardware point of view, we study a key property of defect centers in semiconductors, the phonon-assisted luminescence, which can be measured to perform the readout of the information stored in a quantum bit, or to detect temperature variations. We predict the luminescence and study the exciton-phonon couplings within a rigorous many-body perturbation theory framework,an analysis that has never been performed for defect centers.In particular, we study the optical emission of the negatively-charged boron vacancy in 2D hexagonal boron nitride, which currently stands out among defect centers in 2D materials thanks to its promise for applications in quantum information and quantum sensing. We show that phonons are responsible for the observed luminescence, which otherwise would be dark due to symmetry. We also show that the symmetry breaking induced by the static Jahn-Teller effect is not able to describe the presence of the experimentally observed peak at 1.5 eV.The knowledge of the coupling between electrons and phonons is fundamental for the accurate prediction of all the features of the photoluminescence spectrum. However, the large number of atoms in a defect supercell hinders the possibility use density functional perturbation theory to study this coupling. In this work we present a finite-differences technique to calculate the electron-phonon matrix elements, which exploits the symmetries of the defect in such a way to use the very same set of displacement needed for the calculation of phonons. The computation of electron-phonon coupling thus becomes a simple post-processing of the finite-differences phonons calculation. On the quantum software side, we propose an improved quantum algorithm to calculate the Green's function through real-time propagation, and use it to compute the retarded Green's function for the 2-, 3- and 4-site Hubbard models. This novel protocol significantly reduces the number of controlled operations when compared to those previously suggested in literature. Such reduction is quite remarkable when considering the 2-site Hubbard model, for which we show that it is possible to obtain the exact time propagation of the $\ket{N\pm 1}$ states by exponentiating one single Pauli component of the Hamiltonian, allowing us to perform the calculations on an actual superconducting quantum processor.

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is generated by the bandgap difference for the two materials (∼ 0.4 eV for InAs, and ∼ 1.4 eV for GaAs) which provides a minimum of potential energy for both electrons and holes inside the InAs nanoparticle. The appearance of new nanoscale effects modifies the electro-optical properties of such a system which makes possible the improvement of existing device performance or even fascinating novel device applications. For the creation of coherent structures with very high purity and high density, as it is required for application in light emitting devices, self-assembling is a very important pathway. The quantum dot creation mostly relies on the relaxation of the strain accumulated during the growth of lattice mismatched materials, which happens in a non-equlibrium condition. This results in a statistical distribution of all the parameters characterizing the InAs nanocrystals as size, composition and strain, whose direct manifestation is the inhomogeneously broadened light emission deriving from quantum dot ensembles. At the dawning of the quantum dot development the broadening was considered as a limiting factor for application in semiconductor lasers. Today, it is considered favorably for all the applications where a broad gain spectrum is required as optical amplifiers, monolithic and external-cavity tunable lasers, and superluminescent diodes. The objective of this thesis is the application of InAs/GaAs self-assembled quantum dots to the active region of high power and broad-band superluminescent diodes emitting in the 1.3 μm wavelength region. Superluminescent diodes are edge-emitting semiconductor light sources based on the amplification of spontaneous emission along a waveguide where optical gain is achieved through current injection. They combine the high power and brightness of laser diodes with the low coherence of LEDs. The latter is a fundamental feature for the application in optical coherence tomography medical imaging, where the image resolution is related to the spectral bandwidth of the light source used. The achievement of bandwidths larger than 100 nm are demonstrated in this work through the optimization of molecular beam epitaxy growth conditions. This may be done optimizing the statistical size-dispersion of the dot ensemble, or through the use of different dot layers emitting at slightly different wavelengths. The large bandwidth emission is obtained also due to the peculiar energy structure of this material, for which a multi-state emission appears under particular injection conditions. As a term of comparison, best commercial single-chip superluminescent diodes for the imaging application at 1.3 μm show bandwidths around 60 nm. Moreover, the discrete nature of the energy levels in InAs quantum dots together with the implementation of a GaAs-based technology can be beneficial for the device temperature stability (the competing technology, based on InP, suffers from strong thermal degradation). The analysis and understanding of the device temperature characteristics will be detailed in the last chapter of the manuscript. Even though standard devices show an important temperature dependence, a better stability may be achieved through the use of p-doped active regions. In the last few years quantum dot devices have shown outstanding properties if compared to the competing quantum well technology. Low threshold currents, high temperature stability and low chirp in lasers, large bandwidths and low gain saturation in amplifiers have been demonstrated. However, in spite of the large interest among the scientific community, many of the microscopic processes at the origin of the electro-optical characteristics of this material are not completely understood yet. The physics of the quantum dot active material, will be modeled in this work through the use of systems of rate equations with different complexity depending on the system they are applied to. We will provide a mean-field rate equation model allowing to get insights about carrier dynamics in QD lasers. Also, we will develop two different traveling-wave rate equation models, one for the modeling of the L-I characteristics and the other for the modeling of the spectral characteristics of quantum dot superluminescent diodes. Considering the carrier and photon density distributions across the device cavity is essential in superluminescent diodes, where the high single pass gain results in large non-homogeneities of photon and carrier distributions. The work is motivated by an industrial cooperation with EXALOS AG, a leading company in the development, manufacturing, and sales of broadband superluminescent diodes.

EPFL2007

Spectral signatures of high-symmetry quantum dots and effects of symmetry breaking

Marc-André Dupertuis, Elyahou Kapon, Daniel Oberli, Alok Rudra, Valentina Troncale

High symmetry epitaxial quantum dots (QDs) with three or more symmetry planes provide a very promising route for the generation of entangled photons for quantum information applications. The great challenge to fabricate nanoscopic high symmetry QDs is further complicated by the lack of structural characterization techniques able to resolve small symmetry breaking. In this work, we present an approach for identifying and analyzing the signatures of symmetry breaking in the optical spectra of QDs. Exciton complexes in InGaAs/AlGaAs QDs grown along the [111]B crystalline axis in inverted tetrahedral pyramids are studied by polarization resolved photoluminescence spectroscopy combined with lattice temperature dependence, excitation power dependence and temporal photon correlation measurements. By combining such a systematic experimental approach with a simple theoretical approach based on a point-group symmetry analysis of the polarized emission patterns of each exciton complex, we demonstrate that it is possible to achieve a strict and coherent identification of all the observable spectral patterns of numerous exciton complexes and a quantitative determination of the fine structure splittings of their quantum states. This analysis is found to be particularly powerful for selecting QDs with the highest degree of symmetry (C-3v and D-3h) for potential applications of these QDs as polarization entangled photon sources. We exhibit the optical spectra when evolving towards asymmetrical QDs, and show the higher sensitivity of certain exciton complexes to symmetry breaking.

Iop Publishing Ltd2015

Coherent spin–photon coupling using a resonant exchange qubit

Pasquale Scarlino

Electron spins hold great promise for quantum computation because of their long coherence times. Long-distance coherent coupling of spins is a crucial step towards quantum information processing with spin qubits. One approach to realizing interactions between distant spin qubits is to use photons as carriers of quantum information. Here we demonstrate strong coupling between single microwave photons in a niobium titanium nitride high-impedance resonator and a three-electron spin qubit (also known as a resonant exchange qubit) in a gallium arsenide device consisting of three quantum dots. We observe the vacuum Rabi mode splitting of the resonance of the resonator, which is a signature of strong coupling; specifically, we observe a coherent coupling strength of about 31 megahertz and a qubit decoherence rate of about 20 megahertz. We can tune the decoherence electrostatically to obtain a minimal decoherence rate of around 10 megahertz for a coupling strength of around 23 megahertz. We directly measure the dependence of the qubit–photon coupling strength on the tunable electric dipole moment of the qubit using the ‘AC Stark’ effect. Our demonstration of strong qubit–photon coupling for a three-electron spin qubit is an important step towards coherent long-distance coupling of spin qubits.

2018

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

EPFL2007