Semiconductor-based device architectures in multimaterial fibers
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Theor. models for the action spectrum and the current-voltage characteristics of microporous (colloidal) semiconductor films in photoelectrochem. cells were derived. The derivation is based on the assumptions that the charge carrier transport in the semico ...
The increase of the complexity in semiconductor structures raises more and more the need for local evaluation techniques. For example, laser structures with graded-index waveguides are now widespread, but the characterisation of the shape of the gradient i ...
Optical detectors with responsivity of 1000 A/W and response time of 10 mu s at 50 nW optical input power were fabricated using the AT&T FET-SEED process. ...
In order to investigate the dramatic enhancement of the oxidation rate of semiconductor materials, promoted by an alkali-metal overlayer, we exposed a GaAs(110) surface covered by a monolayer of Cs to oxygen, observing the photoemission spectra of As 2p, G ...
An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices ...
The main fields of applications are today especially broadcast amplifiers and fast power-supplies for plasma physics or neutral Beam Injection. The fisrst interests on the proposed technique is the series connected step inverter stages, which represents a ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge disconti ...
We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of ...
The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the ...
