Synthesis of metal oxide-overcoated carbon materials by liquid phase ALD and their applications in catalysis
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We use molecular dynamics to analyze the dependence on the impact angle of the distribution of defects originated by the deposition of a Ag/sub 19/ cluster on Pd(100) at initial kinetic energies 0.1, 2, 20 and 95 eV. For increasing energy the cluster under ...
We study the deposition of Ag ions, and size selected Ag/sub 7/ and Ag/sub 19/ cluster ions on Pd(100) at total kinetic energies of 20 eV and 95 eV using thermal energy atom scattering and molecular dynamics simulations. We find that at all energies Ag ato ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...
Hydrogenated polymorphous silicon (pm-Si:H) is a new material obtained by plasma-enhanced chemical vapour deposition by running the plasma close to powder formation. Preliminary studies have revealed the presence of silicon nanocrystallites embedded in an ...
Electrodeposition of magnetic multilayers was achieved in the cylindrical pores of a nuclear track-etched polycarbonate membrane. An assembly of wires with an average diameter of 80 nm and a length of 6 μm was obtained. Multilayers in these wires were grow ...
The selectivity of Cu deposition from bis(hexafluoroacetylacetonato)Cu(II) on SiO2 patterned with a Pt seeding layer was studied as a function of the reagent gas mixt. On Pt, the Cu film growth rate increases with the amt. of H2O vapor in the gas flow, and ...
The low-pressure chem. vapor deposition of copper and platinum was studied on SiO2 substrates which had been locally prenucleated with ultrathin metal layers of Pt, Cu, Pd, Au, and W. These layers were between 0.1 and 30 .ANG. thick and were produced by va ...
The low pressure chem. vapor deposition (LPCVD) of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates partially covered with a Pt seeding layer. With a known concn. of water vapor in the gas mixt., almost equal Cu film growth r ...