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The present invention concerns a waveguide amplifier comprising: - at least one embedding cladding material or layer, and - at least one rare-earth ion implanted silicon nitride material or layer embedded in the at least one embedding cladding material or layer, the at least one rare-earth ion implanted silicon nitride material or layer defining a waveguide core enclosed by the at least one embedding cladding material or layer.
Romain Christophe Rémy Fleury, Amir Jafargholi, Jalaledin Tayebpour
Romain Christophe Rémy Fleury, Maliheh Khatibi Moghaddam
Fabien Sorin, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito, Louis Marie Philippe Martin-Monier