The present invention concerns a waveguide amplifier comprising: - at least one embedding cladding material or layer, and - at least one rare-earth ion implanted silicon nitride material or layer embedded in the at least one embedding cladding material or layer, the at least one rare-earth ion implanted silicon nitride material or layer defining a waveguide core enclosed by the at least one embedding cladding material or layer.
Romain Christophe Rémy Fleury, Amir Jafargholi, Jalaledin Tayebpour
Fabien Sorin, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito, Louis Marie Philippe Martin-Monier
Romain Christophe Rémy Fleury, Maliheh Khatibi Moghaddam