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Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Related publications (43)

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Nanowire systems: technology and design (invited paper)

Giovanni De Micheli, Davide Sacchetto, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Shashi Kanth Bobba, Michele De Marchi

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we hav ...

Royal Soc2014

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Design Methodologies and CAD for Emerging Nanotechnologies

Shashi Kanth Bobba

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013

All-optical polariton transistor

Romuald Houdré

Although optical technology provides the best solution for the transmission of information, all-optical devices must satisfy several qualitative criteria to be used as logic elements. In particular, cascadability is difficult to obtain in optical systems, ...

Nature Publishing Group2013

Electron hopping at the Si(111):B-root 3 surface: Insight from local impurity spectroscopy

Cédric Tournier-Colletta

Boron vacancies at the Si( 111):B-root 3 surface are model systems in the comprehension of strongly correlated semiconductor surfaces. By using scanning tunneling spectroscopy, the origin of the single-vacancy electronic structure is addressed. It is shown ...

American Physical Society2013

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012

Streched organic transistors maintain mobility on flexible substrates

Jürgen Brugger, Mihai Adrian Ionescu, Andreea Veronica Savu, Dimitrios Tsamados, Katrin Sidler Arnet, Nenad Cvetkovic

Two levels of aligned stencil lithography were used to fabricate pentacene thin film transistors on 12 mu m thick flexible polyimide substrates. Flexible transistors with 20 x 40 mu m(2) channels were electrically measured under strain up to 2.6%. After on ...

Elsevier2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

Andras Kis, Branimir Radisavljevic

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental ...

2011

Graphene-based Field-effect Transistors

Adarsh Singh Sagar

With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...

EPFL2011