Ab initio study of interface states at metal contacts to III-IV semiconductors
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
A process and device are disclosed for purifying liquids, in particular water, contaminated with inorganic and/or organic impurities. The impurities are transformed and/or precipitated through the use of the catalytic and photocatalytic properties of semic ...
The heat pretreatment of Ni at 500-700 Deg gives a nonstoichiometric Ni oxide which shows metallic cond. and low activity for O evolution; at higher temps. (>700 Deg), a nonconducting NiO (p-type semiconductor) is formed. [on SciFinder (R)] ...
The term values of the ground and excited Rydberg states of alkali metal atoms trapped in rare gas matrixes were derived from an empirical model potential. The anal. potential smoothly connects the Coulomb potential near the core with the shielded Coulomb ...
New time and energy resolved spectra of the L' 2F-X 2P(0,v") bands of NO in Ar and Kr matrixes are reported. The L'(0,v") bands are excited exclusively via the B' 2D valence state and their lifetime is 3000 +- 500 ns in both matrixes. The quantum efficie ...
The use of surface-sensitive experimental techniques has produced in recent years important advances in the understanding of the microscopic nature of heterojunction parameters. In particular, valence band discontinuity has been measured for a large number ...
Soft x-ray photoemission spectroscopy measurements reveal strong differences in chemical bonding and diffusion between II–VI and III–V compound semiconductor-metal interfaces which provide a chemical basis for their systematic differences in Schottky barri ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
The laser-induced luminescence of direct gap semiconductors can be measured with high spatial (1 μm) and temporal (<1 ns) resolution. A profiling technique is described for in-situ measurements during laser processing. It allows the evaluation of tem ...
