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High voltage devices for standard MOS technologies

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Memristor-Based Devices for Sensing

Giovanni De Micheli, Sandro Carrara, Francesca Puppo, Massimiliano Di Ventra

In this paper we propose CMOS-compatible Memristive-Biosensors as label-free, highly sensitive sensors for in-air detection of Vascular Endothelial Growth Factor (VEGF) molecules. The memristive behavior of the fabricated devices is strongly affec ...

2014

Single electron transistors with ultra-thin Au nanowires as a single Coulomb island

Hoël Maxime Guérin

Single electron transistors exhibiting transport properties based on a single Coulomb island have been fabricated using ultra-thin gold nanowires (AuNWs), which are synthesized via a chemical reduction process. The AuNWs are bottom-contacted with source an ...

American Institute of Physics2013

Recent enhancements in BSIM6 bulk MOSFET model

Christian Enz, Yogesh Singh Chauhan, Maria-Anna Chalkiadaki

In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is i ...

2013

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Jean-Michel Sallese, Christophe Lallement

In this letter, we propose to introduce the notion of equivalent capacitance and to generalize the so-called equivalent-thickness concept to model arbitrary shapes of lightly doped nonplanar multigate MOSFETs, without the need to introduce any unphysical p ...

2012

Coulomb blockade phenomenon in ultra-thin gold nanowires

Hoël Maxime Guérin

Ultra-thin gold nanowires with uniform diameters of 2 nm and lengths of over 100 μm are synthesized via the reduction of gold(III) chloride in an oleylamine matrix. The gold nanowires, dispersed on an oxidized substrate, are top-contacted with metallic ele ...

American Institute of Physics2012

Coulomb blockade in a granular material made of gold nanowires

Hoël Maxime Guérin

Uniform, 2 nm diameter gold nanowires were synthesized through the reduction of gold(III) chloride in an oleylamine matrix. They were top-contacted on a Si/SiO2 substrate with metallic electrodes to manufacture back-gated transistors. Due to thermal breaka ...

2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

In-IC Strategies for 3D Devices in Bulk Silicon

Matthieu Bopp

The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...

EPFL2011

SWNT array resonant gate MOS transistor

Mihai Adrian Ionescu, Anupama Arun

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and e ...

2011