Stress and frequency dependence of the direct piezoelectric effect in ferroelectric ceramics
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"More with less" has been the motto behind the hardware miniaturization trend in the microelectronics industry since the 1970s. Active research in the growth of oxide films, including ferroelectrics, which started soon after, followed the same trend. Meanw ...
The contribution of non-180 degrees domain wall displacement to the frequency dependence of the longitudinal piezoelectric coefficient has been determined experimentally in lead zirconate titanate using time-resolved, in situ neutron diffraction. Under sub ...
Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, a ...
Institute of Electrical and Electronics Engineers2012
Ferroelectrics are materials with a spontaneous electrical polarization, which can be switched by an applied electric field between two or more stable orientations permitted by symmetry. The regions where the ferroelectric material is polarized in one dire ...
Bismuth ferrite, BiFeO3, is an important multiferroic material that has attracted remarkable attention for potential applications in functional devices. While thin films of BiFeO3 are attractive for applications in nanoelectronics, bulk polycrystalline BiF ...
The interfaces in complex oxides present unique properties exploitable in nanoscale devices. Recent studies on ferroelectric BiFeO3, BaTiO3, and Pb(Zr, Ti) O-3 have revealed an unusually high electric conductivity of the domain walls (DWs), adding another ...
Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109 degrees domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive ...
The properties of ferroelectric materials, such as lead zirconate titanate (PZT), are heavily influenced by the interaction of defects with domain walls. These defects are either intrinsic or are induced by the addition of dopants. We study here PbTiO3 (th ...
Longitudinal piezoelectric coefficient of a twinned ferroelectric perovskite material with an array of partially compensated head-to-head and tail-to-tail 90-degree domain walls has been studied by phase-field simulations in the framework of the Ginzburg-L ...
Domain walls in ferroic materials have attracted significant interest in recent years, in particular because of the unique properties that can be found in their vicinity(1-3). However, to fully harness their potential as nanoscale functional entities(4,5), ...