Use of ferroelectric hysteresis parameters for evaluation of niobium effects in lead zirconate titanate thin films
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Transient photocurrents are investigated in ferroelectric lead zirconate titanate (PZT) films illuminated by laser pulses in the spectral range of 340-380 nm. At low electric fields, the photocurrent is sensitive to the ferroelectric polarization state and ...
Sol-gel processing parameters of Pb0.99Zr0.55Sn0.37Ti0.06Nb0.02O3 thin films were studied. Effects of H2O, HNO3 and formamide additives on solution gelation and film properties were investigated. Thin films were prepared on Ti/Pt and Ta/Pt metallized Si su ...
The effect of acceptor (Na, Mg, Fe) and donor (Nb,Ta) dopants on the switching properties of Pb(Zr0.53Ti0.47)O-3 (PZT) thin films with Pt electrodes was investigated for broad dopant concentration ranges. The effect of dopants on endurance was found to be ...
The effects of donor (Nb, Ta) and acceptor (Na, Mg, Fe) dopants on the crystallization mechanism of PZT thin films were investigated. The parameters which control microstructure development were found to be different for donors and accepters. Lead stoichio ...
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An identification method for Preisach-type models of hysteresis is presented. By using a phenomenological Preisach-type model for hysteresis we can obtain an exact model for the magnetisation hysteresis in the cases of tapes with strip and with elliptical ...
Rhombohedral Pb(Zr0.70Ti0.30)O-3 thin films of four different well-defined textures, namely, (100), (111), bimodal (110)/(111), and (100)/(111), were prepared by a sol-gel method. The films were characterized in terms of grain size, presence of second phas ...
Bismuth titanate (Bi4Ti3O12) shows promise in piezoelectric applications in a temperature range (300-600 °C) which is not well served by standard piezoelectric ceramics. The proposal to use bismuth titanate ceramics for these applications has a major flaw, ...
Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics are reviewed with the aim of providing an insight into different processes which may affect the behaviour of ferroelectric devices, such as ferroelectric memori ...
A surprising non-cumulative effect of the degradation mechanism (fatigue) of the switched polarization (P-r(s)), was observed in MOCVD and sol-gel prepared Pb(Zr0.47Ti0.53)O-3 (PZT) ferroelectric thin films capacitors (FECAP) with Pt-electrodes. This effec ...
