High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 ferroelectric thin film capacitors
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The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak a ...
A surprising non-cumulative effect of the degradation mechanism (fatigue) of the switched polarization (P-r(s)), was observed in MOCVD and sol-gel prepared Pb(Zr0.47Ti0.53)O-3 (PZT) ferroelectric thin films capacitors (FECAP) with Pt-electrodes. This effec ...
Ultrasonic motors for low electrical power applications are considered for portable devices such as an electronic wristwatch. For the study of a standing wave type motor, a modular approach was proposed, where stators and rotors are added in an assembly st ...
The electronic ground state of a periodic crystalline solid is usually described in terms of extended Bloch orbitals; localized Wannier functions can alternatively be used. These two representations are connected by families of unitary transformations, car ...
A phenomenological thermodynamic theory of ferroelectric thin films epitaxially grown on cubic substrates is developed using a new form of the Gibbs function, which corresponds to the actual mechanical boundary conditions of the problem. It is found that t ...
The self-polarization effect is investigated in Pb(Zr,Ti)O-3 (PZT) thin films deposited by sol-gel and magnetron sputtering techniques. The effective piezoelectric coefficient of as-grown films, which is proportional to their initial polarization (self-pol ...
Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics are reviewed with the aim of providing an insight into different processes which may affect the behaviour of ferroelectric devices, such as ferroelectric memori ...
The effects of niobium doping on the hysteresis parameters of sol-gel Pb-1.1-x/2(Zr0.53Ti0.47)(1-x)NbxO3 (0 < x < 0.05) have been reported fbr two sets of films with analogous grain size and degree of (111) texture but with different surface microstructure ...
A phase diagram based on dielectric-permittivity-versus-temperature measurements and high-temperature X-ray diffractometry was proposed for 0.4Pb(Ni-1/3,Nb-1/3) O-3-xPbZrO(3)-(0.6-x)PbTiO3, (0.2 less than or equal to x less than or equal to 0.32) relaxor-f ...
Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O-3 (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectri ...
