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Strontium Bismuth Titanate is a very promising material for high temperature piezoelectric applications, its elevated ferroelectric phase transition (530°C), linear piezoelectric properties under low field and relatively low room temperature conductivity ( ...
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
Bismuth titanate (Bi4Ti3O12) shows promise in piezoelectric applications in a temperature range (300-600 °C) which is not well served by standard piezoelectric ceramics. The proposal to use bismuth titanate ceramics for these applications has a major flaw, ...
Leakage conduction of (Pb, La)(Zr, Ti)O-3 (PLZT) films grown on Pt bottom electrode, with Pt and Pt/SrRuO3 (Pt/SRO) top electrodes is studied. It is found that the conduction behavior of the ferroelectric capacitors strongly varies depending on the degree ...
The effects of donor (Nb, Ta) and acceptor (Na, Mg, Fe) dopants on the crystallization mechanism of PZT thin films were investigated. The parameters which control microstructure development were found to be different for donors and accepters. Lead stoichio ...
The device has a semiconductor layer provided on an insulating layer and including source and drain (18,20) regions to define a body (22) region of respective field effect transistors. An energy band modifying unit modifies the valence and conduction band ...
Fatigued state of the Pt-PZT-Pt system is studied by means of low-temperature conduction measurements. It is shown that the conduction in the temperature interval of 100-140 degrees K is determined by the cold field emission of electrons (tunneling conduct ...
We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...
A comprehensive study of: leakage conduction in Pb(ZrxTi1-x)O-3 films with Pt electrodes is carried out. The conduction properties of films prepared in different ways (sol-gel coating, metalorganic chemical vapor deposition, sputtering) were studied by usi ...
An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices ...
