Permittivity enhancement due to domain walls interacting with repulsive defects
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We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This b ...
We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...
The dielectric response of a ferroelectric film with bilinear coupling between order parameter and strain is theoretically addressed. An exact solution for the total (lattice and domain contributions) dielectric permittivity of the system for the case wher ...
We investigate the dielectric screening across the Si-SiO2 interface using a first-principle approach. By determining the profile of the microscopic polarization and the effective polarizabilities of SiOn (n = 0,..4) structural units, we show that the vari ...
Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared from alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Dielectric, electrostrictive ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discus ...
Pb(Mg1/3Nb2/3)O-3 thin films were prepared from modified alkoxide solution precursors and their dielectric and electromechanical characteristics were investigated. Preparation of the films is very sensitive to processing parameters. The influence of differ ...
The evolution of switching polarization (P-r(s)) suppression, in Pb(Zr,Ti)O-3 films, induced by two different electric treatments is addressed in terms of the nonlinear dielectric response. The ac electric field dependence of dielectric permittivity was co ...
The ac field dependence of dielectric response of sol-gel derived Pb(Zr, Ti)O-3 thin films is presented. The analysis of amplitude and phase angle of first and third harmonic of the polarization at subswitching fields shows that a description of the dielec ...