Does freezing in PbMg1/3Nb2/3O3 relaxor manifest itself in nonlinear dielectric susceptibility?
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We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...
We study the dielectric susceptibility of liquid hydrogen chloride at a temperature of 313 K using ab initio molecular dynamics evolving, in a homogeneous electric field. For an evolution in absence of electric field, the calculated neutron structure facto ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
Hysteretic and nonlinear dielectric behaviour in ferroelectric ceramics has been of interest since 1950s, when these materials found application in various electronic devices. Presently, these phenomena concern with important areas of science, technology a ...
The lead magnesium niobate [Pb(Mg1/3Nb2/3)O-3 or PMN], and its solid solutions with lead titanate (PbTiO3 or PT), are of great interest because of their high electromechanical properties. At large PMN content, these materials exhibit relaxor characteristic ...
Using density-functional theory, we investigate the structural, vibrational, and dielectric properties of Hf and Zr oxides and silicates which have drawn considerable attention as alternative high-kappa materials. For the silicates, we consider hafnon HfSi ...
Nonlinear dielectric response of soft and hard PZT is experimentally studied at subswitching conditions. The correlations between defect disordering and parameters of nonlinear dielectric response and hysteresis are demonstrated and discussed. (c) 2005 Els ...
Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared from alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Dielectric, electrostrictive ...
In ferroelectric materials, domain wall displacement plays a key role in the dielectric properties measured with respect to the driving field amplitude and frequency. The low to medium field dielectric response in many ferroic systems can be often describe ...
Ferroelectric thin films are widely studied nowadays as potential replacements for semiconductors in modern tunable microwave devices such as tunable filters, phase-shifters, frequency mixers, power dividers, etc. Recent progress in the deposition of compl ...