Sputtered silicon carbide thin films as protective coating for MEMS applications
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The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...
The low pressure chem. vapor deposition (LPCVD) of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates partially covered with a Pt seeding layer. With a known concn. of water vapor in the gas mixt., almost equal Cu film growth r ...
It is now generally recognized that the excitation frequency is an important parameter in radio-frequency (rf) plasma-assisted deposition. Very-high-frequency (VHF) silane plasmas (50-100 MHz) have been shown to produce high quality amorphous silicon films ...
Intrinsic stress measurements were carried out on hydrogenated amorphous silicon (a-Si:H) films deposited with different excitation frequencies (13.56-70 MHz), by plasma-enhanced chemical vapor deposition. It was observed that films deposited at 70 MHz hav ...
The selectivity of Cu deposition from bis(hexafluoroacetylacetonato)Cu(II) on SiO2 patterned with a Pt seeding layer was studied as a function of the reagent gas mixt. On Pt, the Cu film growth rate increases with the amt. of H2O vapor in the gas flow, and ...
Polycryst. diamond films were deposited by hot filament assisted chem. vapor deposition on five metal and insulator substrates. The films obtained were studied by Raman spectroscopy. The position of the Raman line shifts to higher wavenumbers when the ther ...
The low-pressure chem. vapor deposition of copper and platinum was studied on SiO2 substrates which had been locally prenucleated with ultrathin metal layers of Pt, Cu, Pd, Au, and W. These layers were between 0.1 and 30 .ANG. thick and were produced by va ...
A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pre ...
Electrodeposition of magnetic multilayers was achieved in the cylindrical pores of a nuclear track-etched polycarbonate membrane. An assembly of wires with an average diameter of 80 nm and a length of 6 μm was obtained. Multilayers in these wires were grow ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
