Preisach modeling of piezoelectric nonlinearity in ferroelectric ceramics
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The effects of niobium doping on the hysteresis parameters of sol-gel Pb-1.1-x/2(Zr0.53Ti0.47)(1-x)NbxO3 (0 < x < 0.05) have been reported fbr two sets of films with analogous grain size and degree of (111) texture but with different surface microstructure ...
It is shown that at weak alternating stress the relationship between the piezoelectrically induced charge and applied stress in ferroelectric ceramics has the same form as the Rayleigh law for magnetization versus magnetic field in ferromagnetic materials. ...
Rhombohedral Pb(Zr0.70Ti0.30)O-3 thin films of four different well-defined textures, namely, (100), (111), bimodal (110)/(111), and (100)/(111), were prepared by a sol-gel method. The films were characterized in terms of grain size, presence of second phas ...
The large piezoelectric effect of ferroelectric ceramics is utilized in many devices for sensing and actuating purposes. In this paper, the longitudinal direct piezoelectric effect in ceramics based on lead zirconate titanate, lead titanate, barium titanat ...
Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics are reviewed with the aim of providing an insight into different processes which may affect the behaviour of ferroelectric devices, such as ferroelectric memori ...
Pb(Zr1–xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. Fo ...
The direct longitudinal piezoelectric effect (d(33)) in lead zirconate titanate, barium titanate, bismuth titanate and strontium bismuth titanate ceramics was investigated with respect to the dependence on the amplitude of an alternating pressure. At low a ...
Low-field piezoelectric coefficient and strain were investigated in Ca-modified PbTiO3 thin films by means of optical interferometry. A remanent piezoelectric coefficient of 70 pm/V was observed that agrees well with the values previously reported for the ...
Piezoelectric properties of Pb(Zr,Ti)O-3 thin films are investigated as a function of the number of bipolar (switching) and unipolar (nonswitching) voltage pulses. The longitudinal piezoelectric coefficient d(33) decreases with bipolar fatigue reflecting t ...
The piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the p ...
