Publication

Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy

Related publications (36)

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Modeling and Flatness of Rigid and Flexible Cable Suspended Underactuated Robots

Philippe Müllhaupt, Basile Graf

A modeling framework is proposed for the control of rigid and flexible cable-like systems such as cranes, together with a systematic algorithm for computing flat outputs of mechanical systems for which the flat output is a linear combination of the free co ...

2010

A Novel Criterion for Classifiers Combination in Multistream Speech Recognition

Fabio Valente

In this paper we propose a novel information theoretic criterion for optimizing the linear combination of classifiers in multi stream automatic speech recognition. We discuss an objective function that achieves a trade-off between the minimization of a bou ...

2009

Kinetic hard-modelling and spectral validation of rank-deficient spectroscopic data

Julien Léo Billeter, Konrad Hungerbühler

In recent years, chemometric methods for the analysis of multivariate kinetic data have considerably progressed. Kinetic hard-modelling is one of these methods that is based on the rate law and used to determine the kinetic parameters (e.g. rate constants) ...

2009

Amorphous hafnium silicates: structural, electronic and dielectric properties

Alfredo Pasquarello, Peter Broqvist

Models of amorphous (HfO2)x(SiO2)(1), for varying hafnium, content x are generated by ab initio molecular dynamics. The structural properties are analyzed in terms of pair distribution functions from which typical bond lengths and coordination numbers are ...

2007

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Retardation data captured by polarimetric stress-measurements in optical fibers have been reinterpreted in terms of both stress and inelastic strain. The linear dependence of strain birefringence on fiber drawing tension defines the Kohlrausch-Williams-Wat ...

2006

Inelastic strain birefringence in optical fibers

René Salathé, Hans Georg Limberger

Optical Soc America, 2010 Massachusetts Ave Nw, Washington, Dc 20036 Usa2006

We model Si 2p core-level shifts at Si-(ZrO2)(x)(SiO2)(1-x) interfaces for varying Zr content x. Using a first-principles approach, we calculate Si 2p shifts for a model interface and for cluster models, and establish the validity of a linear dependence of ...

2002

Change detection and background extraction by linear algebra

Touradj Ebrahimi, Emrullah Durucan

Change detection plays a very important role in real-time image analysis, e.g., detection of intruders. One key issue is robustness to varying illumination conditions. We propose two techniques for change detection that have been developed to deal with var ...

2001

We formulate the tomographic reconstruction problem in a variational setting. The object to be reconstructed is considered as a continuous density function, unlike in the pixel-based approaches. The measurements are modeled as linear operators (Radon trans ...

SPIE2001

Charge transport properties in the nanostructured ZnO thin film electrode-electrolyte system studied with time resolved photocurrent

Ulf Anders Hagfeldt

The charge transport in nanoporous ZnO was studied by laser flash induced photocurrent transients. The results are discussed using a diffusion model and compared with previous results on TiO2. The charge transport was highly dependent on the potential givi ...

2000