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Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors

Related publications (32)

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Bichiral structure of ferroelectric domain walls driven by flexoelectricity

Nava Setter, Alexander Tagantsev, Petr Yudin

The influence of flexoelectric coupling on the internal structure of neutral domain walls in the tetragonal phase of perovskite ferroelectrics is studied. The effect is shown to lower the symmetry of 180 degrees walls which are oblique with respect to the ...

American Physical Society2012

Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films

Nava Setter, Igor Stolichnov, Dong Guo

Ultrathin films of the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] have recently attracted intensive research interest due to their potential applications in emerging organic devices. As special geometry confinement syst ...

2011

A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper we report the fabrication and detailed electrical characterization of a Metal-Ferroelectric-Oxide-Semiconductor Capacitor aiming at the extraction of the polarization characteristic. In order to evaluate the electrical performances of the fer ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Polarisation reversal in ferroelectric PVDF and PZT films

Roman Gysel

Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...

EPFL2008

Surface-stimulated phenomena in the polarization response of ferroelectrics

Guido Gerra

The integration of ferroelectrics in electronic devices requires that they be used in the form of thin films, which implies that for such systems finite-size effects related to the presence of a ferroelectric-electrode interface become important. In this t ...

EPFL2008

Ferroelectric gate on AlGaN/GaN heterostructures

Lisa Malin

The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...

EPFL2007

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We report a first-principles investigation of ultrathin BaTiO3 films with SrRuO3 electrodes. We find that the ionic relaxations in the metal-oxide electrode play a crucial role in stabilizing the ferroelectric phase. Comparison with frozen-phonon calculati ...

2006

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb(Zr,Ti)O-3 films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Lisa Malin

The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...

2005

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The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...

2005

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The influence of the uniaxial bias stress on the piezoelectric properties of tetragonal BaTiO3 and PbTiO3 monodomain crystals is modeled in the framework of the phenomenological Landau-Ginzburg-Devonshire theory. It is shown that tensile and compressive st ...

2005