{100}-textured, piezoelectric Pb(Zr-x Ti1-x)O-3 thin films for MEMS: integration, deposition and properties
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The in-situ growth of PbZrxTi1-xO3 (PZT) and PbTiO3 (PT) thin films by reactive sputter deposition has been investigated for applications with silicon substrates. In-situ deposition from three simultaneously operating magnetron sources was applied. At the ...
Pyroelectric thin film 12-element linear arrays (element size 0.4x0.9 mm(2)) have been fabricated by standard photolithography techniques on silicon substrates. A voltage responsivity of almost 800 V/W in air and 3000 V/W in vacuum is measured at low frequ ...
A novel piezoelectric thin-film accelerometer has been designed and its performance has been analysed. The piezoelectric thin film (PZT for example) is delineated into an array of pads to reduce the sensor capacitance. By filling the cavity around the PZT ...
The paper reviews different aspects of deposition, integration, and device fabrication of PbZrxTi1-xO3 (PZT) films for application in micromechanical systems. The deposition of such films and the principal processes for their integration onto silicon subst ...
The mechanical response of piezoelectric cantilever beams actuated by sol-gel- derived lead zirconium titanate (PZT) thin film is reported. Small multilayered beams are used to analyse the converse piezoelectric effect and to measure the mechanical deflect ...
A short overview is given on deposition and integration of PZT thin films on silicon for MEMS applications. The application principles are explained and the piezoelectric coefficients are compared with the ones of AlN and ZnO. The materials figure of merit ...
A micro-pump for medical applications is being developed using organometallic derived PZT thin films and silicon micromachining technology. Critical issues include the deposition of 'thick' PZT films (1 to 2 mu m thickness), film processing compatibility w ...
We have studied deposition by in-situ reactive sputtering of ferroelectric Pb(ZrxTi1-x)O3 (PZT) thin films on Pt and RuO2 electrodes, using temperatures in the 490-620°C range. Nucleation on the electrode was found to be of prime importance for the formati ...
Pb(Zr1–xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. Fo ...
For micromechanical applications, piezoelectric PbZrTO3 (PZT) thin films have been deposited on metallised Si3N4/SiO2 layers on Si wafers. Films with compositions near the morphotropic phase boundary (x=0.53) were prepared at 600°C using a multitarget, in- ...