Thickness dependence of the properties of highly c-axis textured AlN thin films
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Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
The postresonator method proposed by Hakki and Coleman for the measurement of dielectric properties of solids in the microwave region is reexamined. Based on the experiments performed around 10 GHz, the limitations of the method in loss determination for m ...
Pyrochlore free Pb(Mg1/3Nb2/3)O-3 (PMN) thin films were prepared from mixed-metal precursors solutions using the sol-gel process. Lead acetate [Pb(CH3COO)(2)], magnesium acetate [Mg(CH3COO)(2)] and niobium ethoxide [Nb(C2H5O)5] were used as starting materi ...
The present paper proposes a model of relaxer ferroelectrics, which describes the polarization response of these materials in terms of vibration of the interphase boundary between the polar regions and nonpolar matrix. The model is formulated and is applie ...
Pyrochlore free 0.9Pb(Mg1/3Nb2/3)O-3-0.1PbTiO(3) thin films were prepared from alkoxide-based solution precursors. Preferential (111) crystallographic orientation was obtained on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating. Dielectric, electrostrictive ...
Using density-functional theory, we investigate the structural, vibrational, and dielectric properties of Hf and Zr oxides and silicates which have drawn considerable attention as alternative high-kappa materials. For the silicates, we consider hafnon HfSi ...
Conductive atomic force microscopy (C-AFM) was used to study the dielectric breakdown of SiO/sub 2/ layers at a nanometric scale. First, bare oxide regions were stressed and broken down using the tip as the metal electrode of a MOS structure. The results s ...
A review of the properties of ferroelectric materials that are relevant to microwave tunable devices is presented: we discuss the theory of dielectric response of tunable bulk materials and thin films; the experimental results from the literature and from ...
This paper addresses the problem of time-dependent dielectric breakdown of Pb(Zr,Ti)O-3 (PZT) thin films. It is shown by using constant-current breakdown measurements, that for PZT film capacitors with Pt and SrRuO3 (SRO) electrodes the breakdown onset is ...
The dielectric response of the relaxer ferroelectric PbMg1/3Nb2/3O3 (PMN) is found to be a non-analytical function of the ac field, with the absolute value of the non-linear component of the polarization given by \P-nl\ alpha E-m(gamma(omega,T)). The depen ...
