High-Resolution Synchrotron-Radiation Core-Level Spectroscopy of Decapped GaAs(100) Surfaces
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With the advent of the very intense 3rd generation synchrotron sources of X rays, new powerful spectroscopic techniques, requiring the detection of very low cross section phenomena, have come of age. Among them Resonant Inelastic X-Ray Scattering (RIXS) is ...
Differently prepared surfaces of quasicrystalline i-Al-Pd-Mn are analyzed using angle-resolved photoemission in the X-ray and ultraviolet range of photon energies. Depending on the preparation, we find both surfaces with crystalline structure and metallic ...
An Sb/Si(lll)root 3x root3 surface has been studied by high-resolution core-level spectroscopy. All the components of the Si 2p core level related to the clean surface have disappeared, and one strong Sb-induced component could be identified at a binding e ...
Properties of ultra-thin films are different from their single crystal counterparts due to the presence of (substrate induced) strain, different degree and type of (growth induced) disorder and different average doping (distribution of oxygen vacancies, fo ...
Titanium-containing amorphous hydrogenated carbon films (a-C:H/Ti) have been deposited by a medium-frequency-driven physical vapor deposition plasma-enhanced chemical-vapor deposition process at 40 kHz. Core-level photoelectron spectroscopy and valence-ban ...
Red tetragallanediide Na2Ga4R4.2THF (R = SitBu3) was prepd. by redn. of the monogallane RGaCl2.THF in heptane or the tetrahedro-tetragallane R4Ga4 in benzene/THF with sodium at 100 Deg. Potassium worked analogously as a redn. agent. As an intermediate ...
Photoelectron spectromicroscopy, the combination of conventional photoelectron spectroscopy and high lateral resolution, is a novel technique that exploits the high brightness of the most recent synchrotron sources. We briefly review its main implementatio ...
Random defects destroy long-range phase coherence, and inhibit the metal-insulator transition in the charge density wave (CDW) system IT-TaS/sub 2/. Photoelectron spectroscopy with high resolution reveals corresponding changes in the electronic structure. ...
The density of states at the Fermi level N(E-F) has been measured on hydrogenated polymorphous (pm-Si:H) silicon samples using both capacitance measurements on Schottky barriers and space-charge-limited current measurements on n(+)/i/n(+) structures. From ...
Random defects destroy long-range phase coherence, and inhibit the metal-insulator transition in the charge density wave (CDW) system 1T-TaS2. Photoelectron spectroscopy with high resolution reveals corresponding changes in the electronic structure. Core l ...