Free-Electron Laser Spectroscopy of Semiconductors and Interfaces
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The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond res ...
The objective of this paper is to present the fundamental phenomena occurring during the scribing and subsequent fracturing process usually performed when preparing surfaces of brittle semiconductors. In the first part, an overview of nano-scratching exper ...
An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. T ...
The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...
Experimental breakthroughs are having a big impact on surface and interface science. We review two series of results: first, photoemission experiments performed with high (0.1 micron) lateral resolution on the scanning instrument MAXIMUM at Wisconsin. Thes ...
The increase of the complexity in semiconductor structures raises more and more the need for local evaluation techniques. For example, laser structures with graded-index waveguides are now widespread, but the characterisation of the shape of the gradient i ...
Theor. models for the action spectrum and the current-voltage characteristics of microporous (colloidal) semiconductor films in photoelectrochem. cells were derived. The derivation is based on the assumptions that the charge carrier transport in the semico ...
We briefly review the advances in two new domains of surface and interface science: spectromicroscopy and free electron laser spectroscopy, with particular emphasis on the programs of our Centre de Spectromicroscopie of the Ecole Polytechnique Federale in ...
Free electron lasers (FEL's) are not new instruments: for a long time, they have produced high-intensity photon beams, primarily in the infrared. They can be, therefore, excellent complementary facilities to synchrotron radiation, whose primary spectral do ...