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Spectromicroscopy with the imaging technique of X-ray photoelectron emission microscopy (X-PEEM) is a microchemical analytical tool installed in many synchrotron radiation laboratories, and which is finding application in diverse fields of research. The me ...
We describe a new pulsed laser deposition (PLD) system that is linked to an angle-resolved photoemission (ARPES) chamber at the Synchrotron Radiation Center (SRC) in Wisconsin, USA. We also discuss our first results on epitaxially grown YBa2Cu3O7-δ (YBCO) ...
Leakage conduction of (Pb, La)(Zr, Ti)O-3 (PLZT) films grown on Pt bottom electrode, with Pt and Pt/SrRuO3 (Pt/SRO) top electrodes is studied. It is found that the conduction behavior of the ferroelectric capacitors strongly varies depending on the degree ...
The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on ...
We describe a new pulsed laser deposition (PLD) system that is linked to an angle-resolved photoemission (ARPES) chamber at the Synchrotron Radiation Center (SRC) in Wisconsin, USA. We also discuss our first results on epitaxially grown YBa2Cu3O7-delta (YB ...
This work reports on the X-ray photoemission spectroscopy (XPS) measurements of the As-rich GaAs(001) surface properties developing due to the different thicknesses of the undoped silicon overlayers. We analyzed the bond nature on the silicon-GaAs interfac ...
The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points ...
We studied using x-ray photoelectron spectroscopy the deposition of Au, In, Ag and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature. The first steps of the Schottky barrier formation on Au and In showed no interface reactions. Free T ...
The interpretation of photoemission-spectromicroscopy studies of Au on GaSe requires a revision of established ideas about this interface, which has long been considered a prototype of Schottky-like systems. We find that the interface-formation process inv ...
We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridati ...
