High resolution resonant photoemission of Ce-based materials
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We show that constant-Fermi-level ab initio molecular dynamics can be used as a computer-based tool to reveal and control relevant defects in semiconductor materials. In this scheme, the Fermi level can be set at any position within the band gap during the ...
We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeI under applied pressures up to similar to 2GPa. We observe one high frequency oscillation at all pressures and one low frequency oscillation that emerges betwee ...
We report on small-angle neutron scattering studies of the intrinsic vortex lattice (VL) structure in detwinned YBa2Cu3O7 at 2 K, and in fields up to 10.8 T. Because of the suppressed pinning to twin-domain boundaries, a new distorted hexagonal VL structur ...
Monolayer structures of Pb on Si(111) attracted recently considerable interest as superconductivity was found in these truly two-dimensional (2D) structures. In this study, we analyzed the electronic surface band structure of the so-called striped incommen ...
Upon metal-metal contact, a transfer of electrons will occur between the metals until the Fermi levels in both phases are equal, resulting in a net charge difference across the metal-metal interface. Here, we have examined this contact electrification in b ...
Angle-resolved photoemission on underdoped La1.895Sr0.105CuO4 reveals that in the pseudogap phase, the dispersion has two branches located above and below the Fermi level with a minimum at the Fermi momentum. This is characteristic of the Bogoliubov disper ...
We use thermal diffuse scattering of x rays to visualize the lens-shaped portions of the Fermi surface in metallic zinc. Our interpretation of the nature of the observed scattered intensity anomalies is supported by the incorporation of inelastic x-ray sca ...
We employed in situ pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO3 (NNO) thin films, grown on NdGaO3(110) and LaAlO3(100) substrates. In the ...
The nucleation and growth behavior of lithium on a CaO/Mo(001) thin film has been investigated by means of scanning tunneling microscopy and spectroscopy. The Li follows two different growth regimes on the surface. Whereas extended 2D islands develop on to ...
We use angle-resolved photoemission spectroscopy to show that the near-surface electronic structure of a bulk insulating iridate Sr3Ir2O7 lying near a metal-Mott insulator transition exhibits weak metallicity signified by finite electronic spectral weight ...