Publication

Coupled electron-hole dynamics at the Si/SiO2 interface

Giorgio Margaritondo
1998
Journal paper

Abstract

We report a new and surprising enhancement of the electric field at the Si/SiO2 interface following the cessation of intense pulsed near-infrared radiation. The phenomenon, measured by optical second-harmonic generation, occurs only for photon energies and oxide film thickness that exceed respective thresholds. We attribute the new effect to multiphoton hole injection into the oxide and to an asymmetry in electron and hole dynamics, in particular to distinctly different trapping and detrapping processes.

Official source

https://infoscience.epfl.ch/record/90329?ln=en

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Coupled electron-hole dynamics at the Si/SiO2 interface

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