Photoelectron microscopy and its applications to semiconductor science
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The lifetimes of non-fixed holograms in LiNbO3 crystals with different dopants, doping levels and oxidation states have been measured in the temperature range from 30 to 180degrees C. Two dark decay mechanisms have been identified: proton compensation and ...
A study of the formation of In- and Au-GaAs(100) interfaces is reported. The metal overlayers are deposited in ultrahigh vacuum on room-temperature (RT) and low-temperature (LT) (100)GaAs grown by molecular-beam epitaxy, following the evaporation of a prot ...
Theor. models for the action spectrum and the current-voltage characteristics of microporous (colloidal) semiconductor films in photoelectrochem. cells were derived. The derivation is based on the assumptions that the charge carrier transport in the semico ...
We report a high-resolution core-level spectroscopy study of the (4 x 2)-c(8 x 2) GaAs(100) surface prepared by thermal decapping of surfaces grown by molecular-beam epitaxy. Ga and As 3d core levels are analyzed using very strict parameter conditions, and ...
The combination of photoemission spectroscopy and high lateral resolution is rapidly evolving from feasibility tests to experiments. We discuss several important recent developments and results. ...
The move of photoemission analysis from the macroscopic to the microscopic domain has been accelerated by the advent of new ultrabright synchrotron sources of soft-X-rays. This makes an overview of photoemission spectromicroscopy, photoemission at high lat ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...
The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points ...
We show that, contrary to intuition and under normal experimental conditions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of ...
A series of events has revolutionized the research on semiconductor interfaces. One of the most interesting is the discovery that heterojunction band lineups can be modified by manipulating the interface on an atomic scale. Specifically, it has been possib ...
