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Soft x-ray photoemission spectroscopy measurements reveal strong differences in chemical bonding and diffusion between II–VI and III–V compound semiconductor-metal interfaces which provide a chemical basis for their systematic differences in Schottky barri ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
