Temperature-dependent photoemission features for overdoped Bi2Sr2CaCu2O8+x cuprates
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Due to imperfect surfaces of most cuprate samples, almost all photoemission studies in the past decade were performed on Bi2Sr2CaCu2O8+x, even though a large fraction of other studies and electronic applications was reported for YBa2Cu3O7-delta (YBCO) fami ...
Cobalt-doping of Bi2Sr2CaCu2Ox beyond a critical level of 1.5-1.7 at % produces both a large decrease in the superconducting transition critical temperature and all of the classic symptoms of Anderson localization. These include: a negative slope of the ab ...
Using angle-resolved photoemission and linearly polarized synchrotron radiation, we measured the electronic band structure of electronic states of CuO2 plane materials ranging from insulators (Sr2CuO2Cl2) to overdoped superconductors (Bi2Sr2CaCu2O8+x). We ...
We used photoemission spectroscopy with synchrotron radiation to investigate the electronic structure of eight different thallium cuprates: pure Tl2.2Ba2CuO(y), Ce-doped Tl2.2Ba(2-x)Ce(x)CuO(y) (x = 0.1, 0.15, 0.2) and Tl2Ba2CeCu3O(y), and Zr-doped Tl2Ba(2 ...
Improved experimental conditions enabled us to increase the signal-to-noise ratio of the photoemission spectra for the superconducting state of Bi2Ca2SrCu2O8, taken with high angular and energy resolution. This also enabled us to reveal a pronounced minimu ...
Doping Bi2Sr2Ca1Cu2O8+y with Co causes a superconductor-insulator transition. We study correlations between changes in the electrical resistivity rho(ab)(T) and the electronic bandstructure using identical single crystalline samples. For undoped samples th ...
We present a photoemission study of the initial growth stages of amorphous Si on the InP(110) cleaved surface, performed at 120 K and compared with the room-temperature (RT) results. Deposition at low temperature gives a larger valence-band discontinuity w ...