Reverse transfer of nanostencil patterns using intermediate sacrificial layer and lift-off process

We propose a new process by which patterns produced by nanostencil lithography can be reversed, so that the final pattern on the substrate has the same contrast (filled or empty) as that of the stencil. In this process, the stencil pattern is first formed on an intermediate sacrificial layer, and then transferred onto the underlying substrate in a reverse manner. Using this process, we can form various pattern structures that cannot be produced by the normal stencil process, such as an array of pores or multiple parallel bridges. Because a bridge in the stencil is transferred also as a bridge on the substrate, we can not only avoid the widening of a narrow bridge pattern by the stress-induced bending of the membrane, but also reduce the width of the bridge even further using the pattern blurring. Using SiO2 as an intermediate layer, we have fabricated various reversed Cr patterns on Si, including an array of 800 nm circular pores and a 100-nm-wide and 150-nm-long nanobridge.